Product Information

EMIF06-HSD03F3

EMIF06-HSD03F3 electronic component of STMicroelectronics

Datasheet
EMI Filter Circuits DFD PROTECTION & FILTER

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5000: USD 0.314 ea
Line Total: USD 1570

4850 - Global Stock
Ships to you between
Thu. 23 May to Wed. 29 May
MOQ: 5000  Multiples: 5000
Pack Size: 5000
Availability Price Quantity
4850 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 5000
Multiples : 5000

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EMIF06-HSD03F3
STMicroelectronics

5000 : USD 0.314
10000 : USD 0.314
25000 : USD 0.314

4850 - WHS 2


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 5000
Multiples : 5000

Stock Image

EMIF06-HSD03F3
STMicroelectronics

5000 : USD 0.314

     
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EMIF06-HSD03F3 EMI filter with integrated ESD protection for micro-SD Card Datasheet production data Features Very low line capacitance to compensate long PCB tracks (2.5 pF typ.) High efficiency in ESD suppression up to 18 kV (IEC 61000-4-2) Very low PCB space consumption: 1.1 x 2.4 mm Ultralow leakage current: 20 nA max. Very thin package: 0.605 mm Flip-Chip package Smart pinout for easier PCB layout (17 bumps) High reduction of parasitic elements through integration and wafer level packaging Figure 1. Pin configuration (bump side) Lead-free package , 2 Complies with the following standards: 9FF IEC 61000-4-2 level 4:15 kV (air 2 , discharge), 8 kV (contact discharge) *1 , 2 Application *1 , 2 SD3.0, UHS-1 SDR104 (208 MHz) *1 , 2 Description (7 , 2 The EMIF06-HSD03F3 chip is a highly integrated device designed to suppress EMI/RFI noise for interface line filtering. Figure 2. Functional schematic The EMIF06-HSD03F3 Flip-Chip packaging L = 1 nH R = 1 Ix Ox means the package size is equal to the die size. Thats why EMIF06-HSD03F3 is a very small device. Additionally, this filter includes ESD protection circuitry, which prevents damage to the C = 2.5 pF LINE protected device when subjected to ESD surges up 18 kV. V DET CC October 2016 DocID025248 Rev 4 1/10 This is information on a product in full production. www.st.com 10Application diagram EMIF06-HSD03F3 1 Application diagram Figure 3. Schema Vcc Top layer Second layer DAT2 I1 O1 Vcc DAT3 O2 I2 GND CMD I3 O3 GND V CC I4 O4 GND CLK CPU I5 O5 SD card DET GND contacts face down I6 O6 DAT0 DAT1 SD card contacts spring DET Maximum distance = 50 mm 2/10 DocID025248 Rev 4

Tariff Desc

8504.50.10 Electrical transformers, static converters (for example, rectifiers) and inductors.

8504.50 COILS, toroidal, having ALL of the following: (a) winding wire dia NOT exceeding 0.25 mm; (b) internal window dia NOT exceeding 40 mm; (c) external dia NOT exceeding 55 mm Op. 17.06.1985 Dec. 13.01.1986 - TC 8532473

8504.90 CORES AND SHAPES, ferrite, iron powder or molybdenum permalloy powder Op. 13.03.1984 Dec. 13.03.1984 - TC 8342777

8547.9 TC 8535449 SHEETING OR SHAPES, electrically insulating, thermally conductive,
being combinations of two OR more of the following:
(a) silicone rubber;
(b) glass fibre;
(c) boron nitride;
(d) polyimide;
(e) copper
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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