Product Information

BUL1102E

BUL1102E electronic component of STMicroelectronics

Datasheet
Bipolar (BJT) Transistor NPN 450 V 4 A 70 W Through Hole TO-220
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.5693 ea
Line Total: USD 1.57

116 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
116 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

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BUL1102E
STMicroelectronics

1 : USD 1.521
3 : USD 1.378
10 : USD 1.222
16 : USD 1.053
43 : USD 1.001

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Height
Length
Width
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Additional Infomation About Product

BUL1102E High voltage fast-switching NPN power transistor Features High voltage capability Very high switching speed TAB Applications Four lamp electronic ballast for: 3 3 2 2 1 120 V mains in push-pull configuration 1 277 V mains in half bridge current feed TO-220FP TO-220 configuration Description This is a high voltage fast switching NPN power Figure 1. Internal schematic diagram transistor manufactured in multi epitaxial planar technology. It uses a cellular emitter structure with C (2, TAB) planar edge termination to enhance switching speeds while maintaining a wide RBSOA. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the (1) transistor to withstand a high collector current B level during breakdown condition, without using the Transil protection usually necessary in typical converters for lamp ballast. (3) E Table 1. Device summary Order codes Marking Package Packaging BUL1102E BUL1102E TO-220 Tube BUL1102EFP BUL1102EFP TO-220FP Tube February 2012 Doc ID 7929 Rev 5 1/13 www.st.com 13 Absolute maximum ratings BUL1102E 1 Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 1100 V CES BE V Collector-emitter voltage (I = 0) 450 V CEO B V Emitter-base voltage (I = 0) 12 V EBO C I Collector current 4 A C I Collector peak current (t < 5 ms) 8 A CM P I Base current 2 A B I Base peak current (t < 5 ms) 4 A BM P BUL1102E total dissipation at T = 25C 70 C P W TOT BUL1102EFP total dissipation at T = 25 C 30 C BUL1102EFP insolation withstand voltage (RMS) from V 1500 V ISO all three leads to external heatsink T Storage temperature -65 to 150 C STG T Max. operating junction temperature 150 C J Table 3. Thermal data Symbol Parameter Value Unit BUL1203E thermal resistance junction-case 1.8 C/W R thJC BUL1203EFP thermal resistance junction-case 4.2 C/W 2/13 Doc ID 7929 Rev 5

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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