Product Information

BD711

BD711 electronic component of STMicroelectronics

Datasheet
Bipolar Transistors - BJT NPN Power Switching

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.91 ea
Line Total: USD 0.91

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

BD711
STMicroelectronics

1 : USD 0.9477
10 : USD 0.7529
100 : USD 0.6211
500 : USD 0.5349
1000 : USD 0.4339
5000 : USD 0.407

     
Manufacturer
Product Category
Package / Case
Transistor Polarity
Packaging
Brand
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No. Of Pins
Operating Temperature Max
Svhc
Alternate Case Style
Application Code
Collector Emitter Saturation Voltage Vceon
Continuous Collector Current Ic Max
Current Gain Hfe Max
Current Ic @ Vce Sat
Current Ic Continuous A Max
Current Ic Hfe
Gain Bandwidth Ft Typ
Hfe Typ
No. Of Transistors
Power Dissipation Ptot Max
Termination Type
Voltage Vcbo
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BD707/709/711 BD708/712 COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMENTARY PNP - NPN DEVICES APPLICATION LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BD707, BD709 and BD711 are silicon Epitaxial-Base NPN power transistors in Jedec 3 2 TO-220 plastic package. They are intented for 1 use in power linear and switching applications. The BD707 and BD711 complementary PNP TO-220 types are BD708 and BD712 respectively. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN BD707 BD709 BD711 PNP BD708 BD712 V Collector-Base Voltage (I = 0) 60 80 100 V CBO E V Collector-Emitter Voltage (V = 0) 60 80 100 V CER BE V Collector-Emitter Voltage (I = 0) 60 80 100 V CEO B V Emitter-Base Voltage (I = 0) 5 V EBO C I Collector Current 12 A C I Collector Peak Current 18 A CM I Base Current 5 A B o P 75 W tot Total Dissipation at T 25 C c o T Storage Temperature -65 to 150 C stg o T Max. Operating Junction Temperature 150 C j For PNP types voltage and current values are negative 1/6 September 1999 Obsolete Product(s) - Obsolete Product(s)BD707/708/709/711/712 THERMAL DATA o R Thermal Resistance Junction-case Max 1.67 C/W thj-case o R Thermal Resistance Junction-ambient Max 70 C/W thj-case o ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off for BD707/708 V = 60 V 100 A CBO CB Current (I = 0) for BD709 V = 80 V 100 A E CB BD711/712 for V = 100 V 100 A CB o T = 150 C case for BD707/708 V = 60 V 1 mA CB for BD709 V = 80 V 1 mA CB for BD711/712 V = 100 V 1 mA CB I Collector Cut-off for BD707/708 V = 30 V 100 mA CEO CE Current (I = 0) for BD709 V = 40 V 100 mA B CE for BD711/712 V = 50 V 100 mA CE I Emitter Cut-off Current V = 5 V 1 mA EBO EB (I = 0) C V * Collector-Emitter I = 100 mA CEO(sus) C Sustaining Voltage for BD707/708 60 V (I = 0) for BD709 80 V B for BD711/712 100 V V * Collector-Emitter I = 4 A I = 0.4 A 1 V CE(sat) C B Saturation Voltage V * Knee Voltage I = 3 A I = ** 0.4 V CEK C B V * Base-Emitter Voltage I = 4 A V = 4 V 1.5 V BE C CE h * DC Current Gain I = 0.5 A V = 2 V 40 120 400 FE C CE I = 2 A V = 2 V C CE BD707/708 for 30 for BD709 30 IC = 4 A VCE = 4 V 15 150 I = 10 A V = 4 V C CE for BD707/708 5 10 for BD709 8 for BD711/712 8 f Transition frequency I = 300 mA V = 3 V 3 MHz T C CE * Pulsed: Pulse duration = 300 s, duty cycle 1.5 % ** Value for which IC = 3.3 A at VCE = 2V. For PNP types voltage and current values are negative. 2/6 Obsolete Product(s) - Obsolete Product(s)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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