Product Information

S34ML04G100TFI000

S34ML04G100TFI000 electronic component of SkyHigh Memory

Datasheet
Flash 4Gb 3V 25ns NAND Flash

Manufacturer: SkyHigh Memory
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 7.521 ea
Line Total: USD 7.52

1369 - Global Stock
Ships to you between
Thu. 09 May to Mon. 13 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1369 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 1
Multiples : 1

Stock Image

S34ML04G100TFI000
SkyHigh Memory

1 : USD 7.521
10 : USD 7.0495
25 : USD 6.9
96 : USD 6.233
288 : USD 6.141
576 : USD 5.8305
1056 : USD 5.6465
2592 : USD 5.6465
5088 : USD 5.612

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Series
Memory Size
Interface Type
Organisation
Timing Type
Data Bus Width
Supply Voltage - Min
Supply Voltage - Max
Supply Current - Max
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Access Time
Memory Type
Operating Temperature
Architecture
Brand
Maximum Operating Current
Factory Pack Quantity :
Product
Speed
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.
Image Description
S34ML04G100TFI003 electronic component of Infineon S34ML04G100TFI003

SLC NAND Flash Parallel 3V/3.3V 4G-bit 512M x 8 20ns 48-Pin TSOP-I T/R
Stock : 0

S34ML04G104BHI010 electronic component of Infineon S34ML04G104BHI010

Spansion Flash Memory 4Gb, 3V, 25ns NAND Flash
Stock : 0

S34ML04G200BHV000 electronic component of SkyHigh Memory S34ML04G200BHV000

NAND Flash SLC,4Gb,3x,3V,x8,4bit,VBM63,
Stock : 124

S34ML04G100TFV000 electronic component of SkyHigh Memory S34ML04G100TFV000

NAND Flash SLC,4Gb,4x,3V,x8,1bit,TS48,
Stock : 13

S34ML04G200TFV003 electronic component of Infineon S34ML04G200TFV003

SLC NAND Flash Parallel 3V/3.3V 4G-bit 512M x 8 Automotive 48-Pin TSOP-I T/R
Stock : 0

S34ML04G200BHI000 electronic component of SkyHigh Memory S34ML04G200BHI000

Spansion Flash 4G, 3V, 25ns NAND Flash
Stock : 69

S34ML04G200TFI003 electronic component of SkyHigh Memory S34ML04G200TFI003

SLC NAND Flash Parallel 3V/3.3V 4G-bit 512M x 8 48-Pin TSOP-I T/R
Stock : 0

S34ML04G200TFI000 electronic component of SkyHigh Memory S34ML04G200TFI000

Spansion Flash 4G, 3V, 25ns NAND Flash
Stock : 0

S34ML04G104BHV010 electronic component of Infineon S34ML04G104BHV010

Flash Memory Nand
Stock : 0

S34ML04G200TFV000 electronic component of SkyHigh Memory S34ML04G200TFV000

NAND Flash SLC,4Gb,3x,3V,x8,4bit,TS48,
Stock : 28

Image Description
S29JL032J70TFI220 electronic component of Infineon S29JL032J70TFI220

Flash 32MB Flash 3.0V 70ns Parallel NOR Flash
Stock : 0

S29JL032J70TFI020 electronic component of Infineon S29JL032J70TFI020

Flash 32Mb 3V 70ns Parallel NOR Flash
Stock : 3377

S29GL512S11TFI010 electronic component of Infineon S29GL512S11TFI010

Flash 512Mb 3V 110ns Parallel NOR Flash
Stock : 473

S29GL512S10DHI020 electronic component of Infineon S29GL512S10DHI020

Flash 512Mb 3V 100ns Parallel NOR Flash
Stock : 876

S29GL512S10DHI010 electronic component of Infineon S29GL512S10DHI010

Flash 512 MBIT 3V 100NS Parallel NOR Flash
Stock : 1455

S29GL512P11TFI020 electronic component of Infineon S29GL512P11TFI020

Flash 512Mb 3V 100ns Parallel NOR Flash
Stock : 0

S29GL256S90DHI020 electronic component of Infineon S29GL256S90DHI020

Flash 256Mb 3V 90ns Parallel NOR Flash
Stock : 977

S29GL256S11DHIV20 electronic component of Infineon S29GL256S11DHIV20

Flash 256Mb 3V 110ns Parallel NOR Flash
Stock : 922

S34ML01G1 S34ML02G1 S34ML04G1 1 Gb/2 Gb/4 Gb, 3 V, SLC NAND Flash for Embedded Distinctive Characteristics Density NAND flash interface 1 Gb/ 2 Gb / 4 Gb Open NAND Flash Interface (ONFI) 1.0 compliant Address, Data and Commands multiplexed Architecture Supply voltage Input / Output Bus Width: 8-bits / 16-bits Page size: 3.3-V device: Vcc = 2.7 V ~ 3.6 V x8 = 2112 (2048 + 64) bytes 64 bytes is spare area Security x16 = 1056 (1024 + 32) words 32 words is spare area One Time Programmable (OTP) area Block size: 64 Pages Hardware program/erase disabled during power transition x8 = 128 KB + 4 KB Additional features x16 = 64k + 2k words 2 Gb and 4 Gb parts support Multiplane Program and Erase Plane size: commands 1 Gb / 2 Gb: 1024 Blocks per Plane Supports Copy Back Program x8 = 128 MB + 4 MB 2 Gb and 4 Gb parts support Multiplane Copy Back Program x16 = 64M + 2M words Supports Read Cache 4 Gb: 2048 Blocks per Plane Electronic signature x8 = 256 MB+ 8 MB x16 = 128M + 4M words Manufacturer ID: 01h Device size: Operating temperature 1 Gb: 1 Plane per Device or 128 MB Industrial: -40 C to 85 C 2 Gb: 2 Planes per Device or 256 MB Automotive: -40 C to 105 C 4 Gb: 2 Planes per Device or 512 MB Performance Page Read / Program For one plane structure (1-Gb density) Block zero is valid and will be valid for at least 1,000 Random access: 25 s (Max) program-erase cycles with ECC Sequential access: 25 ns (Min) For two plane structures (2-Gb and 4-Gb densities) Program time / Multiplane Program time: 200 s (Typ) Blocks zero and one are valid and will be valid for at least Block Erase (S34ML01G1) 1,000 program-erase cycles with ECC Block Erase time: 2.0 ms (Typ) Package options Block Erase / Multiplane Erase (S34ML02G1, S34ML04G1) Lead Free and Low Halogen Block Erase time: 3.5 ms (Typ) 48-Pin TSOP 12 20 1.2 mm Reliability 63-Ball BGA 9 11 1 mm 100,000 Program / Erase cycles (Typ) (with 1 bit ECC per 528 bytes (x8) or 264 words (x16)) 10 Year Data retention (Typ) Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 002-00676 Rev. *V Revised March 20, 2018S34ML01G1 S34ML02G1 S34ML04G1 Contents 1. General Description..................................................... 4 5.8 Thermal Resistance...................................................... 37 5.9 Program / Erase Characteristics................................... 37 1.1 Logic Diagram................................................................ 5 1.2 Connection Diagram ...................................................... 6 6. Timing Diagrams......................................................... 38 1.3 Pin Description............................................................... 7 6.1 Command Latch Cycle.................................................. 38 1.4 Block Diagram................................................................ 8 6.2 Address Latch Cycle..................................................... 38 1.5 Array Organization......................................................... 9 6.3 Data Input Cycle Timing................................................ 39 1.6 Addressing................................................................... 10 6.4 Data Output Cycle Timing 1.7 Mode Selection ............................................................ 12 (CLE=L, WE =H, ALE=L, WP =H)............................... 39 2. Bus Operation ............................................................ 13 6.5 Data Output Cycle Timing (EDO Type, CLE=L, WE =H, ALE=L) .......................... 40 2.1 Command Input ........................................................... 13 6.6 Page Read Operation ................................................... 40 2.2 Address Input............................................................... 13 6.7 Page Read Operation (Interrupted by CE ).................. 41 2.3 Data Input .................................................................... 13 6.8 Page Read Operation Timing with CE Dont Care...... 41 2.4 Data Output.................................................................. 13 6.9 Page Program Operation.............................................. 42 2.5 Write Protect ................................................................ 13 6.10 Page Program Operation Timing 2.6 Standby........................................................................ 13 with CE Dont Care ..................................................... 42 3. Command Set............................................................. 14 6.11 Page Program Operation with Random Data Input ...... 43 3.1 Page Read................................................................... 15 6.12 Random Data Output In a Page ................................... 43 3.2 Page Program.............................................................. 15 6.13 Multiplane Page Program Operation 3.3 Multiplane Program S34ML02G1 and S34ML04G1................................. 44 S34ML02G1 and S34ML04G1................................ 16 6.14 Block Erase Operation.................................................. 45 3.4 Page Reprogram 6.15 Multiplane Block Erase S34ML02G1 and S34ML04G1................................ 16 S34ML02G1 and S34ML04G1................................. 45 3.5 Block Erase.................................................................. 18 6.16 Copy Back Read with Optional Data Readout.............. 46 3.6 Multiplane Block Erase 6.17 Copy Back Program Operation S34ML02G1 and S34ML04G1................................ 18 With Random Data Input............................................... 46 3.7 Copy Back Program..................................................... 18 6.18 Multiplane Copy Back Program 3.8 EDC Operation S34ML02G1 and S34ML04G1....... 19 S34ML02G1 and S34ML04G1................................. 47 3.9 Read Status Register................................................... 21 6.19 Read Status Register Timing........................................ 48 3.10 Read Status Enhanced 6.20 Read Status Enhanced Timing ..................................... 48 S34ML02G1 and S34ML04G1................................ 22 6.21 Reset Operation Timing................................................ 48 3.11 Read Status Register Field Definition.......................... 22 6.22 Read Cache.................................................................. 49 3.12 Reset............................................................................ 22 6.23 Cache Program............................................................. 50 3.13 Read Cache................................................................. 23 6.24 Multiplane Cache Program 3.14 Cache Program............................................................ 24 S34ML02G1 and S34ML04G1................................. 51 3.15 Multiplane Cache Program 6.25 Read ID Operation Timing ............................................ 53 S34ML02G1 and S34ML04G1................................ 25 6.26 Read ID2 Operation Timing .......................................... 53 3.16 Read ID........................................................................ 26 6.27 Read ONFI Signature Timing........................................ 54 3.17 Read ID2...................................................................... 29 6.28 Read Parameter Page Timing ...................................... 54 3.18 Read ONFI Signature .................................................. 29 6.29 OTP Entry Timing ......................................................... 54 3.19 Read Parameter Page ................................................. 29 6.30 Power On and Data Protection Timing ......................... 55 3.20 One-Time Programmable (OTP) Entry ........................ 31 6.31 WP Handling............................................................... 55 4. Signal Descriptions ................................................... 32 7. Physical Interface ....................................................... 56 4.1 Data Protection and Power On / Off Sequence ........... 32 7.1 Physical Diagram.......................................................... 56 4.2 Ready/Busy.................................................................. 32 8. System Interface ......................................................... 58 4.3 Write Protect Operation ............................................... 33 9. Error Management ...................................................... 59 5. Electrical Characteristics.......................................... 34 9.1 System Bad Block Replacement................................... 59 5.1 Valid Blocks ................................................................. 34 9.2 Bad Block Management................................................ 60 5.2 Absolute Maximum Ratings ......................................... 34 5.3 Recommended Operating Conditions.......................... 34 10. Ordering Information.................................................. 61 5.4 AC Test Conditions...................................................... 34 11. Document History Page ............................................. 62 5.5 AC Characteristics ....................................................... 35 5.6 DC Characteristics....................................................... 36 5.7 Pin Capacitance........................................................... 36 Document Number: 002-00676 Rev. *V Page 2 of 71

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)

Looking for help? Visit our FAQ's Section to answer to all your questions

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
 

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted