Product Information

SM4512NHKPC-TRG

SM4512NHKPC-TRG electronic component of Sinopower

Datasheet
MOSFET N Trench 30V 80A (Tc) 2.3V @ 250uA 1.9 mΩ @ 20A,10V DFN5x6A-8_EP RoHS
Manufacturer: Sinopower
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6723 ea
Line Total: USD 0.67

5888 - Global Stock
Ships to you between
Tue. 04 Jun to Fri. 07 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
5167 - WHS 1


Ships to you between
Tue. 04 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1

Stock Image

SM4512NHKPC-TRG
Sinopower

1 : USD 0.4663
10 : USD 0.3323
30 : USD 0.2556
100 : USD 0.2211
500 : USD 0.2057
1000 : USD 0.1962

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation Max
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The SM4512NHKPC-TRG MOSFET is an N-channel Trench 30V 80A power FET from Sinopower semiconductor. It features a low-threshold voltage of 2.3V and a low on-resistance of 1.9 mO at 20A, 10V. The device is housed in a small DFN5x6A-8_EP package that is RoHS compliant. This makes the SM4512NHKPC-TRG an ideal choice for space-constrained, high-power applications such as DC-DC converters, or motor and solenoid drivers. It also has a low gate charge which helps reduce switching losses and improve system efficiency. The device can withstand a continuous drain-source voltage up to 30V and deliver a continuous drain current of up to 80A.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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