Product Information

SVS20N60FJD2

SVS20N60FJD2 electronic component of Silan

Datasheet
600V 20A 160mΩ@10V,10A 45W 4V@250uA 4pF@100V N Channel 1.174nF@100V 39nC@10V -55℃~+150℃@(Tj) TO-220FJ-3L MOSFETs ROHS
Manufacturer: Silan
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.875 ea
Line Total: USD 1.88

564 - Global Stock
Ships to you between
Fri. 31 May to Wed. 05 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1749 - WHS 1


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 1
Multiples : 1
1 : USD 1.2386
10 : USD 1.0272
30 : USD 0.9206
100 : USD 0.7704
500 : USD 0.7093
1000 : USD 0.6757

Read More Specifications

     
Manufacturer
Product Category
Category
Datasheet
Rohs
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Reverse Transfer Capacitance Crss@Vds
Type
Input Capacitance Ciss@Vds
Total Gate Charge Qg@Vgs
Operating Temperature
LoadingGif

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Additional Infomation About Product

The SVS20N60FJD2 is a N Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) manufactured by Silan. It is housed in a TO-220FJ-3L packaging and is ROHS certified. Its maximum drain-source voltage is 600V, with a 0.160mO maximum resistance at 10V and 10A. It can handle up to 45W at 4V and 250uA. The capacitances of this MOSFET include 4pF at 100V and 1.174nF at 100V. Its total gate charge is 39nC at 10V and it operates between -55? and +150? (Tj).

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Silan may also be referenced as

Hangzhou Silan Microelectronics

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