Product Information

SVF4N65DTR

SVF4N65DTR electronic component of Silan

Datasheet
MOSFET N Trench 650V 4A 4V @ 250uA 2.7 Ω @ 2A,10V TO-252-2 (DPAK) RoHS
Manufacturer: Silan
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.2808 ea
Line Total: USD 1.4

28023 - Global Stock
Ships to you between
Wed. 22 May to Mon. 27 May
MOQ: 5  Multiples: 5
Pack Size: 5

 More Buying Options & Price Grid(s)

Availability Price Quantity
1736 - WHS 1


Ships to you between
Wed. 22 May to Mon. 27 May

MOQ : 5
Multiples : 5
5 : USD 0.2826
50 : USD 0.2303
150 : USD 0.208
500 : USD 0.1801
2500 : USD 0.1676
5000 : USD 0.1601

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The SVF4N65DTR is a MOSFET N-Channel Trench Transistor from the Silan Semiconductor Corporation. It has a voltage rating of 650 Volts, a current rating of 4 Amps and a gate threshold voltage of 4 Volts. The device has a low gate charge of 250uA with a low RDS(ON) of 2.7 Ohms at 2Amps and 10Volts. It is housed in a SurfaceMount TO-252-2 Plastic Package (DPAK) and is RoHS compliant.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Silan may also be referenced as

Hangzhou Silan Microelectronics

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