Product Information

SKIIP 38GB12E4V1 M20

Name: SKIIP 38GB12E4V1 M20
Brand: Semikron
SKU: SKIIP38GB12E4V1M20_Semikron
Availability: OutOfStock
Rating: 5 (11 reviews)

SKIIP 38GB12E4V1 M20 electronic component of Semikron

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Datasheet

Module: IGBT; transistor/transistor; IGBT half-bridge; Ic:300A

Manufacturer: Semikron

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 315.1724 ea
Line Total: USD 315.17

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Fri. 24 May to Thu. 30 May MOQ : 1 Multiples : 1 SKIIP 38GB12E4V1 M20 Semikron	1 : USD 336.879

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Additional Infomation About Product

The SKIIP 38GB12E4V1 M20 is an insulated-gate bipolar transistor (IGBT) module manufactured by Semikron. It is an IGBT half-bridge, comprising two IGBT transistors and four diodes. The module features a collector-emitter continuous current rating of 300A, and is suitable for use in power conversion, motor control, and other applications that require high-speed switching and high power density. It is designed to operate with maximum junction temperature of 175°C and features an integrated bypass diode to protect against overvoltage conditions.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Semikron may also be referenced as

SEMIKR
SEMIKRON INC

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Manufacturer Semikron Semikron
Product Category IGBT Modules IGBT Modules
Mounting Screw Screw
Electrical Mounting Press - Fit Press - Fit
Case Miniskiip® 3 Miniskiip® 3
Application Inverter, Frequency Changer Inverter, Frequency Changer
Semiconductor Structure Transistor/Transistor Transistor/Transistor
Topology IGBT Half - Bridge, NTC Thermistor IGBT Half - Bridge, NTC Thermistor
Type Of Module IGBT IGBT
Pulsed Collector Current 900 A 900 A
Gate-Emitter Voltage 20 V 20 V
Max. Off-State Voltage 1.2 kV 1.2 kV
Collector Current 300 A 300 A