Product Information

SEMIX603GB12E4SICP

SEMIX603GB12E4SICP electronic component of Semikron

Datasheet
Module: IGBT; transistor/transistor; IGBT half-bridge; Ic:600A

Manufacturer: Semikron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 467.3561 ea
Line Total: USD 467.36

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 499.5502

     
Manufacturer
Product Category
Mounting
Electrical Mounting
Application
Semiconductor Structure
Case
Topology
Technology
Type Of Module
Pulsed Collector Current
Max. Off-State Voltage
Collector Current
Gate-Emitter Voltage
LoadingGif

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The SEMIX603GB12E4SICP is an insulated gate bipolar transistor (IGBT) Module manufactured by Semikron. It features a half-bridge IGBT circuit design with two IGBTs in series. This module has an Ic of 600A and is used for controlling large currents. The module is easy to install and can be used to create complex switching circuits through its integrated DRAIN, GATE and SOURCE connections. It also has extended creepage distances to ensure safety, and is capable of withstanding high voltages. In addition, this IGBT Module is capable of operating at high frequencies, which makes it suitable for use in applications which require high-frequency switching.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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