Product Information

SW4N60

SW4N60 electronic component of Sam&wing

Datasheet
MOSFET N Trench 600V 4A (Tc) 4.5V @ 250uA 2.2 Ω @ 2A,10V TO-252 RoHS
Manufacturer: Sam&wing
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2421 ea
Line Total: USD 0.24

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between
Mon. 03 Jun to Thu. 06 Jun

MOQ : 1
Multiples : 1

Stock Image

SW4N60
Sam&wing

1 : USD 0.3149
10 : USD 0.2554
30 : USD 0.2301
100 : USD 0.1983
500 : USD 0.1841
1000 : USD 0.1758

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation Max
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The Sam&wing SW4N60 MOSFET with N Trench Technology is a 600V 4A (Tc) 4.5V power switch with a maximum current limit of 250uA and a saturation resistance of 2.2 Ω @ 2A, 10V. It has TO-252 RoHS packaging and is manufactured by Sam&wing. This MOSFET is designed for use in high-voltage and high-frequency switching systems. It is suitable for switching and controlling high-power circuits up to 600V, 4A, and with its low on-state resistance, is capable of delivering high efficiency with minimal power loss. It has a low gate-source threshold voltage, and is designed to reduce EMI/RFI through the use of tight construction and advanced shielding techniques. Additionally, it is RoHS compliant and meets high standards of quality.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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