Product Information

SW4N65

SW4N65 electronic component of Sam&wing

Datasheet
MOSFET N Trench 650V 4A (Tc) 4.5V @ 250uA 2.6 Ω @ 2A,10V TO-220 RoHS

Manufacturer: Sam&wing
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4308 ea
Line Total: USD 0.43

17 - Global Stock
Ships to you between
Mon. 03 Jun to Thu. 06 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5 - WHS 1


Ships to you between
Mon. 03 Jun to Thu. 06 Jun

MOQ : 1
Multiples : 1

Stock Image

SW4N65
Sam&wing

1 : USD 0.3916
10 : USD 0.3155
50 : USD 0.2828
100 : USD 0.2421
500 : USD 0.224
1000 : USD 0.213

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation Max
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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The SW4N65 is a MOSFET N Trench device manufactured by Sam&wing, with a 650V breakdown rating and a 4A maximum on-state drain current. It has a maximum temperature rating of 4.5V @ 250uA, and a drain-source resistance of 2.6 Ohms @ 2A, 10V. This device is packaged in a TO-220 form factor and is RoHS compliant.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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