Product Information

RU3060L

RU3060L electronic component of Ruichips

Datasheet
MOSFET N Trench 30V 53A 2.7V @ 250uA 13 mΩ @ 30A,10V TO-252-2 (DPAK) RoHS

Manufacturer: Ruichips
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.1837 ea
Line Total: USD 0.92

1605 - Global Stock
Ships to you between
Wed. 22 May to Mon. 27 May
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
1585 - WHS 1


Ships to you between
Wed. 22 May to Mon. 27 May

MOQ : 5
Multiples : 5

Stock Image

RU3060L
Ruichips

5 : USD 0.1837
50 : USD 0.1613
150 : USD 0.1516
500 : USD 0.1396
2500 : USD 0.1168
5000 : USD 0.1137

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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The RU3060L with MOSFET N Trench is an advanced low gate charge N-channel Power MOSFET from Ruichips that has excellent switching characteristics and low resistance. It has a drain-source voltage rating of 30V and a continuous drain current rating of 53A. It has a maximum drain-source on-state resistance of 2.7V @ 250uA and 13 mO @ 30A and a drain-source breakdown voltage of 10V. It is packaged in the TO-252-2 (DPAK) RoHS package for enhanced reliability. It has a high switching speed and low gate-charge, making it suitable for use in high-frequency switching applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Shenzhen ruichips Semicon

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