Product Information

RTQ035P02TR

RTQ035P02TR electronic component of ROHM

Datasheet
MOSFET P-CH 20V 3.5A TSMT6
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.906 ea
Line Total: USD 0.91

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 3000
Multiples : 3000
3000 : USD 0.2586
6000 : USD 0.2515
9000 : USD 0.2432
24000 : USD 0.2409

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif

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Additional Infomation About Product

RTQ035P02 Transistor 2.5V Drive Pch MOS FET RTQ035P02 z External dimensions (Unit : mm) z Structure Silicon P-channel MOSFET TSMT6 1.0MAX 2.9 0.85 1.9 z Features 0.95 0.95 0.7 (6) (5) (4) 1) Low On-resistance.(80m at 2.5V) 2) High Power Package. 0~0.1 (1) (2) (3) 3) High speed switching. 1pin mark 4) Low voltage drive.(2.5V) 0.16 0.4 Each lead has same dimensions Abbreviated symbol : TL z Applications DC-DC converter z Packaging specifications z Equivalent circuit (6) (5) (4) Package Taping Code TR Type Basic ordering unit 3000 2 (pieces) RTQ035P02 1 (1) Drain (2) Drain (3) Gate (1) (2) (3) (4) Source (5) Drain 1 ESD PROTECTION DIODE (6) Drain 2 BODY DIODE z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Drainsource voltage VDSS 20 V Gatesource voltage VGSS 12 V Continuous ID 3.5 A Drain current 1 17.5 Pulsed IDP A Continuous IS 1 A Source current (Body diode) 1 Pulsed ISP 4 A 2 Total power dissipation PD 1.25 W Channel temperature Tch 150 C Range of Storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board z Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth (ch-a) 100 C / W Mounted on a ceramic board. Rev.A 1/4 1.6 2.8 0.3~0.6RTQ035P02 Transistor z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 A VGS=12V, VDS=0V Drain-source breakdown voltage V(BR)DSS 20 V ID=1 , VmA, GS=0V A Zero gate voltage drain current IDSS 1 VDS=20V, VGS=0V Gate threshold voltage VDS=10V, ID=1mA VGS(th) 0.7 2.0 V 50 65 m ID=3.5A, VGS=4.5V 55 70 m ID=3.5A, VGS=4V Static drain-source on-state RDS(on) resistance 80 100 m ID=1.75A, VGS=2.5V Foward transfer admittance Yfs 3.5 S VDS=10V, ID=3.5A Input capacitance Ciss 1200 pF VGS=0V VDS=10V, Output capacitance Coss 200 pF f=1MHz Reverse transfer capacitance Crss 130 pF Turn-on delay time td(on) 16 ns ID=2A Rise time tr 40 ns VDD 15V VGS=4.5V Turn-off delay time td(off) 55 ns RL=7.5 RG=10 Fall time tf 30 ns Total gate charge Qg 10.5 nC VDD 15V Gate-source charge Qgs 2.0 nC VGS=4.5V ID=3.5A Gate-drain charge Qgd 3.5 nC PULSED z Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Conditions Unit VSD 1.2 V IS=1A, VGS=0V Forward voltage Rev.A 2/4

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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