Product Information

RSX101M-30TFTR

RSX101M-30TFTR electronic component of ROHM

Datasheet
Schottky Diodes & Rectifiers Diode Schottky 30V 1A AUTO GRADE

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5793 ea
Line Total: USD 0.58

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 0.5793
10 : USD 0.3401
100 : USD 0.2324
1000 : USD 0.1927
3000 : USD 0.1716

     
Manufacturer
Product Category
Packaging
Brand
Repetitive Reverse Voltage Vrrm Max
Forward Current Ifav
Diode Configuration
Diode Case Style
No. Of Pins
Forward Voltage Vf Max
Forward Surge Current Ifsm Max
Operating Temperature Max
Product Range
Automotive Qualification Standard
Svhc
Semiconductor Technology
LoadingGif

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Data Sheet Schottky Barrier Diode RSX101M-30 Applications Dimensions (Unit : mm) Land size figure (Unit : mm) General rectification 0.10.1 0.05 1.60.1 1.2 Features 1)Small power mold type. (PMDU) 2)Low V , Low I F R 3)High reliability PMDU Construction Silicon epitaxial Structure 0.90.1 0.80.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date Taping specifications (Unit : mm) 0.250.05 1.550.05 2.00.05 4.00.1 1.810.1 4.00.1 1.00.1 1.5MAX Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Reverse voltage (repetitive) V 30 V RM V Reverse voltage (DC) 30 V R Average rectified forward current Io 1 A Forward current surge peak (60Hz1cyc) I 45 A FSM Junction temperature 150 Tj C Storage temperature Tstg 40 to 150 C (*1)Mounting on epoxi board. 180Half sine wave Electrical characteristics (Ta=25C) Parameter Conditions Symbol Min. Typ. Max. Unit V Forward voltage - 0.35 0.39 V I =1A F F I Reverse current - 90 200 AV =30V R R Capacitance between terminals Ct - 60.0 - pF V =10V , f=1MHz R ESD breakdown voltage ESD - 12.0 - kV C=200pF ,R=0 www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.05 - Rev.C 2.60.1 3.50.2 3.50.05 1.750.1 0.85 8.00.2 3.710.1 3.05RSX101M-30 Data Sheet 1 1000 1000000 Ta=150 Ta=125 f=1MHz 100000 Ta=125 Ta=75 Ta=150 10000 0.1 100 Ta=25 Ta=75 1000 Ta=-25 Ta=25 100 10 0.01 10 Ta=-25 1 1 0.001 0.1 0 100 200 300 400 500 0 5 10 15 20 25 30 0 5 10 15 20 25 30 FORWARD VOLTAGEVF(mV) REVERSE VOLTAGEVR(V) REVERSE VOLTAGE:VR(V) VF-IF CHARACTERISTICS VR-IR CHARACTERISTICS VR-Ct CHARACTERISTICS 350 1000 380 Ta=25 Ta=25 Ta=25 340 900 IF=1A f=1MHz VR=30V 330 370 n=30pcs 800 VR=0V n=30pcs n=10pcs 320 700 360 310 600 300 500 350 290 400 300 280 AVE:103.1uA 340 200 270 AVE:300.1pF AVE:349.9mV 100 260 330 0 250 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 200 30 100 Ta=25 90 25 IF=0.5A Ifsm 80 1cyc IR=1A 150 Ifsm Irr=0.25*IR 70 8.3ms 8.3ms 20 8.3ms n=10pcs 1cyc 60 50 100 15 40 10 30 50 20 AVE:66.0A 5 AVE:8.30ns 10 0 0 0 110 100 trr DISPERSION MAP NUMBER OF CYCLES IFSM DISPERSION MAP IFSM-CYCLE CHARACTERISTICS Mounted on epoxy board 1000 100 1 IM=10mA IF=0.5A 90 Rth(j-a) Ifsm 80 1ms time 0.8 100 t 70 300us D=1/2 60 Rth(j-c) 0.6 10 50 Sin(180) DC 0.4 40 30 1 0.2 20 10 0 0 0.1 0 0.511.5 2 1 10 100 0.001 0.01 0.1 1 10 100 1000 AVERAGE RECTIFIED TIME:t(ms) TIME:t(s) FORWARD CURRENTIo(A) IFSM-t CHARACTERISTICS Rth-t CHARACTERISTICS Io-Pf CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.05 - Rev.C PEAK SURGE PEAK SURGE FORWARD CURRENT:IFSM(A) FORWARD VOLTAGE:VF(mV) FORWARD CURRENT:IFSM(A) FORWARD CURRENT:IF(A) REVERSE CURRENT:IR(uA) TRANSIENT REVERSE RECOVERY TIME:trr(ns) REVERSE CURRENT:IR(uA) THAERMAL IMPEDANCE:Rth (/W) CAPACITANCE BETWEEN CAPACITANCE BETWEEN PEAK SURGE FORWARD POWER TERMINALS:Ct(pF) TERMINALS:Ct(pF) FORWARD CURRENT:IFSM(A) DISSIPATION:Pf(W)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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