RSX101VAM30TR ROHM

RSX101VAM30 Schottky Barrier Diode Data sheet Outline V 30 V R I 1 A o I 5 A FSM Features Inner Circuit High reliability Small mold type Low V and low I F R Application Packaging Specifications General rectification Packing Embossed Tape Reel Size(mm) 180 Taping Width(mm) 8 Structure Basic Ordering Unit(pcs) 3000 Silicon epitaxial planar Taping Code TR Marking R Absolute Maximum Ratings (T =25C unless otherwise specified) c Parameter Symbol Conditions Limits Unit V Repetitive peak reverse voltage Duty0.5 30 V RM V Reverse voltage Reverse direct voltage 30 V R Glass epoxy mounted I 60Hz half sin waveformresistive load Average rectified forward current 1 A o T =100 Max. c t=100secNon-repetitiveone cycle I Peak forward surge current 5 A FSM T =25 a (1) T Junction temperature - 150 j T Storage temperature - -40 150 stg Note(1) To avoid occurrence of thermal runaway actual board is to be designed to fulfill dP /dT<1/R . d j th(j-a) (T =25C unless otherwise specified) Characteristics j Parameter Symbol Conditions Min. Typ. Max. Unit V I =0.7A - 0.38 0.42 V F1 F Forward voltage V I =1.0A - 0.42 0.47 V F2 F I V =5V - 15 40 A R1 R Reverse current I V =30V R2 - 40 200 A R Attention www.rohm.com 1/5 2016 ROHM Co., Ltd. All rights reserved. 2017/05/16 Rev.001RSX101VAM30 Data sheet Characteristic Curves www.rohm.com 2/5 2016 ROHM Co., Ltd. All rights reserved. 2017/05/16 Rev.001