Product Information

RPI-1050

RPI-1050 electronic component of ROHM

Datasheet
Optical Switches, Reflective, Phototransistor Output IOH for IVI Industial Grade

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

RPI-1050
ROHM

1 : USD 2.8307
10 : USD 1.8144
100 : USD 1.2524
500 : USD 1.0928
750 : USD 0.9777
2250 : USD 0.9619
4500 : USD 0.8977
9750 : USD 0.8892
24750 : USD 0.888
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Collector- Emitter Voltage VCEO Max
Maximum Collector Current
Maximum Operating Temperature
Minimum Operating Temperature
Mounting Style
Series
Packaging
Vf - Forward Voltage
Vr - Reverse Voltage
Brand
Output Type
Sensing Method
Wavelength
Number Of Channels
Cnhts
Fall Time
Hts Code
If - Forward Current
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
LoadingGif

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4-Direction Detector Surface Mount type RPI-1050 Datasheet lApplications lDimensions (Unit : mm) Note : *1 Unspecified tolerance shall be 0.2. Stamp (year, week, DSCs day of the week) DVCs 1PIN Mark Projectors Mark side (symbol of check in company) Pattern lFeatures 1) Surface mount 2) Optical Internal connection diagram 3) 4-way detection possible Anode Cathode Collector2 Collector1 Detector2 Detector1 Emitter2 Emitter1 lAbsolute maximum ratings (Ta = 25C) Parameter Symbol Value Unit I Forward current 35 mA F Input Reverse voltage V 5 V (Infrared light R emitting diode) Power dissipation P 80 mW D V Collector-emitter voltage 30 V CEO V Emitter-collector voltage 4.5 V ECO Output (Phototransistor) Collector current I 30 mA C P Collector dissipation 80 mW C T Operating temperature -25 to +85 C opr Storage temperature T C -30 to +85 stg www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.07 - Rev.A 1/3Data Sheet RPI-1050 lElectrical and optical characteristics (Ta = 25C) 1) Input characteristics Values Parameter Symbol Conditions Unit Min. Typ. Max. Forward voltage V I =5mA - 1.35 1.6 V F F I V =5V Reverse current - - 10 mA R R Peak light emitting wavelength l I =5mA - 850 - nm p F * Non-coherent Infrared light emitting diode used. 2) Output characteristics Values Parameter Symbol Conditions Unit Min. Typ. Max. I V =10V Dark current - - 0.5 mA CED CE l Peak sensitivity wavelength - 800 - nm p 3) Transfer characteristics Values Parameter Symbol Conditions Unit Min. Typ. Max. V =5V CE Collector current I 150 - - C I =5mA F mA V =5V CE I Leak current - - 12 leak I =5mA F I =20mA F Collector-emitter V - - 0.4 V CE(sat) saturation voltage I =0.1mA C Rise time tr - 10 - V =5V, I =20mA CC F Response time ms R =100W L Fall time tf - 10 - www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.07 - Rev.A 2/3

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
LAPIS Semiconductor
RHE
RHM
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ROHM Semiconductor

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