Product Information

RPI-576A

RPI-576A electronic component of ROHM

Datasheet
Optical Switches, Transmissive, Phototransistor Output PHOTOINTERRUPTER

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.8551 ea
Line Total: USD 1.86

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 22 May to Fri. 24 May

MOQ : 1
Multiples : 1

Stock Image

RPI-576A
ROHM

1 : USD 1.8551
10 : USD 1.1724
100 : USD 0.79
400 : USD 0.6829
1200 : USD 0.6022
2800 : USD 0.5828
5200 : USD 0.5549
10000 : USD 0.5186
25200 : USD 0.5137

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Output Device
Collector- Emitter Voltage VCEO Max
Maximum Collector Current
Forward Current
Mounting Style
Maximum Operating Temperature
Minimum Operating Temperature
Packaging
If - Forward Current
Sensing Method
Wavelength
Brand
Power Dissipation
Fall Time
Rise Time
Factory Pack Quantity :
Output Type
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Product Type
Subcategory
Taric
Vf - Forward Voltage
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External dimensions (Unit : mm) RPI-576 Photointerrupter, General type 10 13.7 2-0.8 2.35 Through hole Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Applications Forward current IF 50 mA Printers 4-1.0 Reverse voltage VR 5 V Facsimiles Power dissipation PD 80 mW 8.95 AV equipment Collector-emitter voltage VCEO 30 V Cross-section A-A Emitter-collector voltage VECO 4.5 V Gap Features 5 0.8 R2.5 Collector current 0.5 IC 30 mA 1) Heat resistance (170C). Collector power dissipation PC 80 mW A 2) Small gap (0.5mm) and good accuracy. Optical axis center Operating temperature Topr 25 to +85 C 3) Quick response time. Storage temperature Tstg 40 to +85 C 4) Filter against visible ray is built-in. Soldering temperture Tsol 260 / 3 C / s 1mm from the body bottom. Electrical and optical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions A Forward voltage VF 1.3 1.6 VIF=50mA 4-0.4 4-0.45 Reverse current IR 10 A VR=5V (2.54) (10) Dark current ICEO 0.5 A VCE=10V Peak sensitivity wavelength P 800 nm 14 Collector current IC 0.5 VCE=5V, IF=20mA mA 13.60.1 VCE(sat) 0.1 0.5 V IF=20mA, IC=0.5mA Collector-emitter saturation voltage 4.650.1 Rise time tr 10 s Cathode Collector Response time VCC=5V, IF=20mA, RL=100 Fall time 10 s tf Cut-off frequency fC 1 MHz Notes: IF=50mA Non-coherent Infrared light emitting diode used. 1. Unspecified tolerance 950 nm Peak light emitting wavelength P shall be 0.2 . VCC=5V, IC=1mA, RL=100 Response time tr tf 10 s 2. Dimension in parenthesis are This product is not designed to be protected against electromagnetic wave. 2-0.7 Anode Emitter show for reference. Maximum sensitivity wavelength P 800 nm Electrical and optical characteristics curves 1000 5 50 25C 100 0C 4 100 25C 40 50C d 80 40 200 75C 3 tr tf 100 10 30 RL=5k VCE=30V 60 30 VCE=20V tr 50 tf VCE=10V 2 RL=2k 20 tf 1 tr 40 20 RL=1k 20 1 10 20 10 0.1 10 0 0 0 0 0312 45 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10 20 50 100 200 500 1000 2000 25 0 25 50 75 100 20 0 20 40 60 80 100 0 1020304050 AMBIENT TEMPERATURE : Ta (C) DISTANCE : d (mm) FORWARD VOLTAGE : VF (V) FORWARD CURRENT : IF (mA) COLLECTOR CURRENT : Ic (A) AMBIENT TEMPERATURE : Ta (C) Fig.8 Response time vs. Fig.9 Dark current vs. ambient Fig.3 Forward current vs. forward voltage Fig.1 Relative output vs. distance ( ) Fig.2 Forward current falloff Fig.7 Collector current vs. forward current collector current temperature 3.0 160 Input VCC 140 100 100 120 IF=25mA 2.0 80 PD PC Input 100 80 20mA Output 90% 60 80 RL 60 15mA 10% 60 Output 1.0 40 40 10mA td 40 tr tf 20 20 5mA td : Delay time 20 t r : Rise time (time for output current to rise 0 0 0 0 from 10% to 90% of peak current) 0312 45 40 20 0 20406080 100 0 248610 20 0 20406080 100 t f : Fall time (time for output current to fall COLLECTOR-EMITTER VOLTAGE : VCE (V) DISTANCE : d (mm) AMBIENT TEMPERATURE : Ta (C) AMBIENT TEMPERATURE : Ta (C) from 90% to 10% of peak current) Fig.5 Power dissipation / collector power Fig.6 Relative output vs. ambient Fig.4 Relative output vs. distance ( ) dissipation vs. ambient temperature temperature Fig.10 Output characteristics Fig.11 Response time measurement circuit Rev.A Output ( ) photo- Input LED Infrared Transfer Output Input Photo ( ) transistor light characteristics charac- charac- transistor emitter teristics teristics diode RELATIVE COLLECTOR CURRENT : Ic (%) RELATIVE COLLECTOR CURRENT : Ic (%) d POWER DISSIPATION / COLLECTOR POWER DISSIPATION : PD / Pc (mW) FORWARD CURRENT : IF (mA) RELATIVE COLLECTOR CURRENT : Ic (%) FORWARD CURRENT : IF (mA) COLLECTOR CURRENT : Ic (mA) COLLECTOR CURRENT : IC (mA) 10 5.85 0.40.1 3.50.4 7.5 576 2.5 0.7 RESPONSE TIME : t (s) 5.60.1 6 5.2 2.54 0.9 DARK CURRENT : ID (nA) 2.6 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party s intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer s right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies toobjectiv criteria or aninforme (by MITI clause) on the basis ofcatch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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