Product Information

RGT50NS65DGTL

RGT50NS65DGTL electronic component of ROHM

Datasheet
IGBTs Trench Field Stop 650V 25A LPDS RoHS
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.2775 ea
Line Total: USD 3.28

777 - Global Stock
Ships to you between
Thu. 23 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
777 - WHS 1


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 3.2775
10 : USD 2.783
25 : USD 2.691
100 : USD 2.3575
250 : USD 2.231
500 : USD 2.116
1000 : USD 1.8745
2000 : USD 1.863
5000 : USD 1.794

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Igbt Type
Voltage - Collector Emitter Breakdown Max
Current - Collector Ic Max
Gate Threshold Voltage-Vgeth
Vceon Max @ Vge Ic
LoadingGif

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Additional Infomation About Product

The RGT50NS65DGTL is an IGBT (Insulated Gate Bipolar Transistor) with Trench Field Stop technology designed by ROHM, which is a Japanese semiconductor and electronic component manufacturer. It is rated for 650 volts and 25 amps, making it suitable for a wide variety of applications. The RGT50NS65DGTL comes with a RoHS (Restriction of Hazardous Substances) certification and is compliant with EU environmental regulations. It also features a low-profile IGBT design and is available in template packages.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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