Product Information

RF301B2STL

RF301B2STL electronic component of ROHM

Datasheet
Rectifiers RECOMMENDED ALT 755-RF301BM2STL

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 0.2548 ea
Line Total: USD 637

0 - Global Stock
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 2500
Multiples : 2500
2500 : USD 0.2548

0 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 175
Multiples : 1
175 : USD 0.5657
250 : USD 0.5321

0 - WHS 3


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 163
Multiples : 163
163 : USD 0.4468

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Product
Brand
Factory Pack Quantity :
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Data Sheet Fast Recovery Diode RF301B2S Land size figure(Unit : mm) Applications Dimentions(Unit : mm) 6.0 General rectification Features 1.6 1.6 1)Power mold type(CPD) 2)Ultra Low V F 3)Very fast recovery CPD 4)Low switching loss 2.3 2.3 Construction Structure Silicon epitaxial planar (2) ROHM : CPD JEITA : SC-63 Manufacture Date (1) (3) Taping specifications(Unit : mm) Absolute maximum ratings(Ta=25C) Parameter Limits Symbol Unit Reverse voltage (repetitive peak) V 200 V RM Reverse voltage (DC) V 200 V R Average rectified forward current(*1) Io 3 A Forward current surge peak (60Hz / 1cyc)(*1) I 40 A FSM Junction temperature 150 Tj C Storage temperature Tstg 55 to 150 C (*1)Bussiness frequencies, Rating of R-load, Tc=128 C MAX. Electrical characteristics(Ta=25C) Parameter Conditions Symbol Min. Typ. Max. Unit Forward voltage V - 0.87 0.93 V I =3A F F I Reverse current - 10nA 10 A V =200V R R trr - 14 25 ns Reverse recovery time I =0.5A,I =1A,Irr=0.25*I F R R Thermal impedance jc -- 6 C/W JUNCTION TO CASE www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.05 - Rev.D 1/3 3.0 2.0 6.0Data Sheet RF301B2S Electrical characteristics curves 10 10000 100 Ta=150 C Ta=125 C f=1MHz Ta=150 C 1000 1 Ta=125C Ta=75 C 100 Ta=75 C 0.1 10 Ta=25 C Ta=25 C 10 Ta=-25 C Ta=-25 C 1 0.01 0.1 1 0 50 100 150 200 0.001 0 102030 0 100 200 300 400 500 600 700 800 900 1000 REVERSE VOLTAGE VR(V) REVERSE VOLTAGE : V (V) R FORWARD VOLTAGE : V (mV) F V -I CHARACTERISTICS R R V -Ct CHARACTERISTICS R V -I CHARACTERISTICS F F 890 100 150 Ta=25 C Ta=25 C Ta=25 C 90 140 V =200V R I =3A f=1MHz F 880 80 n=30pcs 130 V =0V n=30pcs R n=10pcs 70 120 870 110 60 50 100 860 90 AVE:99.4pF 40 80 30 AVE:859.4mV AVE:4.60nA 850 70 20 60 10 50 840 0 V DISPERSION MAP F Ct DISPERSION MAP I DISPERSION MAP R 1000 300 30 Ta=25C Ifsm Ifsm 1cyc 250 25 I =0.5A F I =1A R 8.3ms 8.3ms 8.3ms Irr=0.25*I 200 20 R 100 1cyc n=10pcs 150 15 100 10 10 AVE:13.7ns AVE:126.0A 50 5 0 1 0 1 10 100 trr DISPERSION MAP NUMBER OF CYCLES I DISPERSION MAP FSM I -CYCLE CHARACTERISTICS FSM www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.05 - Rev.D 2/3 PEAK SURGE FORWARD CURRENT:I (A) FORWARD VOLTAGE:V (mV) F FORWARD CURRENT:I (A) F FSM REVERSE CURRENT:I (nA) R REVERSE CURRENT:I (nA) REVERSE RECOVERY TIME:trr(ns) R CAPACITANCE BETWEEN CAPACITANCE BETWEEN PEAK SURGE TERMINALS:Ct(pF) TERMINALS:Ct(pF) FORWARD CURRENT:I (A) FSM

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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