X-On Electronics has gained recognition as a prominent supplier of RF4E060AJTCR mosfet across the USA, India, Europe, Australia, and various other global locations. RF4E060AJTCR mosfet are a product manufactured by ROHM. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

RF4E060AJTCR

RF4E060AJTCR electronic component of ROHM
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See Product Specifications
Part No. RF4E060AJTCR
Manufacturer: ROHM
Category: MOSFET
Description: MOSFET NCH 30V 6A MIDDLE POWER
Datasheet: RF4E060AJTCR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7173 ea
Line Total: USD 0.72

Availability - 111
Ships to you between
Wed. 05 Jun to Fri. 07 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2411 - WHS 1


Ships to you between Wed. 05 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 0.5923
10 : USD 0.5129
100 : USD 0.3645
500 : USD 0.3128
1000 : USD 0.2737
3000 : USD 0.2426
6000 : USD 0.2415
9000 : USD 0.2335
24000 : USD 0.2311

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We proudly offer the RF4E060AJTCR MOSFET at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the RF4E060AJTCR MOSFET.

RF4E060AJ Datasheet Nch 30V 6A Middle Power MOSFET llOutline DFN2020-8S V 30V DSS R (Max.) 37m DS(on) HUML2020L8 I 6.0A D P 2.0W D llInner circuit llFeatures 1) Low on - resistance. 2) High power small mold package (HUML2020L8). 3) Pb-free lead plating RoHS compliant 4) Halogen free 5) 100% Rg and UIS tested. llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Quantity (pcs) 3000 Taping code TCR Marking HT llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 30 V DSS I Continuous drain current 6.0 A D *1 I Pulsed drain current 24 A DP V Gate - Source voltage 12 V GSS *2 I Avalanche current, single pulse 2.0 A AS *2 E Avalanche energy, single pulse 3.0 mJ AS *3 P Power dissipation 2.0 W D T Junction temperature 150 j Operating junction and storage temperature range T -55 to +150 stg www.rohm.com 1/11 2019 ROHM Co., Ltd. All rights reserved. 20190527 - Rev.002 RF4E060AJ Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 R Thermal resistance, junction - ambient - - 62.5 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 18 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current I Gate - Source leakage current V = 12V, V = 0V - - 100 nA GSS GS DS V V = V , I = 1mA Gate threshold voltage 0.5 - 1.5 V GS(th) DS GS D V I = 1mA GS(th) D Gate threshold voltage - -1.8 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 6.0A - 28 37 GS D Static drain - source *4 R m DS(on) on - state resistance V = 2.5V, I = 3.0A - 41 55 GS D R Gate resistance f=1MHz, open drain - 2.2 - G Forward Transfer *4 Y V = 5.0V, I = 3.0A 3.1 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 L 1mH, V = 15V, R = 25, STARTING T = 25 Fig.3-1,3-2 DD G j *3 Mounted on a Cu Board (40400.8mm) *4 Pulsed www.rohm.com 2/11 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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