Product Information

RF081M2STR

RF081M2STR electronic component of ROHM

Datasheet
ROHM Semiconductor Rectifiers DIODE FAST RECOVERY 200V.8A
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

562: USD 0.1596 ea
Line Total: USD 89.7

8730 - Global Stock
Ships to you between
Wed. 15 May to Tue. 21 May
MOQ: 562  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
738 - WHS 1


Ships to you between Wed. 15 May to Tue. 21 May

MOQ : 562
Multiples : 1
562 : USD 0.1714

8730 - WHS 2


Ships to you between Wed. 15 May to Tue. 21 May

MOQ : 562
Multiples : 1
562 : USD 0.1596
1000 : USD 0.1564

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Max Surge Current
Ir - Reverse Current
Recovery Time
Series
Packaging
Product
Brand
Factory Pack Quantity :
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Additional Infomation About Product

Data Sheet Super Fast Recovery Diode RF081M2S Land size figure (Unit : mm) Series Dimensions (Unit : mm) Standard Fast Recovery 0.10.1 1.2 0.05 1.60.1 Applications General rectification PMDU Features 1)Small power mold type. (PMDU) Structure 2)high switching speed 3)Low Reverse current 0.90.1 0.80.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date Construction Silicon epitaxial planar Taping dimensions (Unit : mm) 0.250.05 1.550.05 4.00.1 2.00.05 1.810.1 4.00.1 1.00.1 1.5MAX Absolute maximum ratings (Tl=25C) Parameter Limits Conditions Symbol Unit Repetitive peak Reverse voltage V 200 RM V Reverse voltage V 200 V Direct voltage R 0.8 Glass epoxy substrate mounted Average rectified forward current Io A 1.0 5050mm Glass epoxy substrate mounted Forward current surge peak I 15 A 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25C FSM Junction temperature 150 Tj C Storage temperature Tstg 55 to 150 C Electrical characteristics (Tj=25C) Parameter Conditions Symbol Min. Typ. Max. Unit 0.83 0.95 I =0.8A F V Forward voltage V F I =1.0A 0.86 0.98 F I V =200V Reverse current 0.01 10 A R R Reverse recovery time trr 12 25 ns I =0.5A,I =1A,Irr=0.25*IR F R Thermal Resistance Rth(j-l) 20 C/W junction to lead www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.05 2.60.1 3.50.2 3.50.05 1.750.1 0.85 8.00.2 3.710.1 3.05RF081M2S Data Sheet Electrical characteristics curves 10000 100 10 Tj=150 Tj=150 f=1MHz Tj=125 1000 1 Tj=125 10 100 Tj=25 Tj=25 0.1 10 1 0.01 1 200 400 600 800 1000 1200 0 5 10 15 20 25 30 0 50 100 150 200 FORWARD VOLTAGEVF(mV) REVERSE VOLTAGEVR(V) REVERSE VOLTAGE:VR(V) VF-IF CHARACTERISTICS VR-IR CHARACTERISTICS VR-Ct CHARACTERISTICS 900 100 60 Tj=25 Tj=25 Tj=25 IF=1.0A VR=200V f=1MHz n=20pcs n=20pcs VR=0V 850 55 n=10pcs 800 10 50 AVE:51.5pF AVE:818mV AVE:10.8nA 750 45 1 700 40 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 30 1000 100 Tj=25 IF=0.5A 25 Ifsm IR=1A 80 Irr=0.25*IR 8.3ms 8.3ms n=10pcs 20 100 1cyc 60 AVE:69.5A 15 40 10 10 AVE:12.2ns 20 5 0 1 0 110 100 trr DISPERSION MAP IFSM DISPERSION MAP NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 30 1000 1000 IM=10mA IF=0.5A No break at 30kV Rth(j-a) 25 Ifsm 1ms time t 100 20 300us 100 Mounted on epoxy board Rth(j-c) 15 10 AVE:13.6kV 10 10 1 5 0 1 0.1 C=200pF C=100pF 110 100 0.001 0.01 0.1 1 10 100 1000 R=0 R=1.5k TIME:t(ms) TIME:t(s) IFSM-t CHARACTERISTICS ESD DISPERSION MAP Rth-t CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.05 PEAK SURGE PEAK SURGE FORWARD CURRENT:IFSM(A) FORWARD VOLTAGE:VF(mV) FORWARD CURRENT:IFSM(A) FORWARD CURRENT:IF(A) ELECTROSTATIC REVERSE CURRENT:IR(nA) DISCHARGE TEST ESD(KV) REVERSE CURRENT:IR(nA) REVERSE RECOVERY TIME:trr(ns) CAPACITANCE BETWEEN PEAK SURGE CAPACITANCE BETWEEN TRANSIENT TERMINALS:Ct(pF) FORWARD CURRENT:IFSM(A) TERMINALS:Ct(pF) THAERMAL IMPEDANCE:Rth (/W)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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