Product Information

RF081M2STFTR

RF081M2STFTR electronic component of ROHM

Datasheet
RECTIFIER, AEC-Q101, 20A, 200V, SOD-123
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.1045 ea
Line Total: USD 0.1

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1
1 : USD 0.1045
25 : USD 0.0997
100 : USD 0.0989
250 : USD 0.098
500 : USD 0.0971

Read More Specifications

     
Manufacturer
Product Category
If - Forward Current
Configuration
Vf - Forward Voltage
Max Surge Current
Maximum Operating Temperature
Series
Brand
Repetitive Reverse Voltage Vrrm Max
Reverse Recovery Time Trr Max
Diode Case Style
No. Of Pins
Automotive Qualification Standard
Svhc
LoadingGif

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Additional Infomation About Product

1 Super Fast Recovery Diode RF081M2STF Datasheet AEC-Q101 Qualified Series Dimensions (Unit : mm) Land size figure (Unit : mm) 0.10.1 0.05 Standard Fast Recovery 1.60.1 1.2 Application General rectification PMDU Cathode 0.90.1 Features Structure 0.80.1 ROHM : PMDU 1) Low forward voltage JEITA : SOD-123 1 : Manufacture Date 2) Low switching loss Anode Taping Dimensions (Unit : mm) 0.250.05 1.550.05 4.00.1 2.00.05 1.550.05 Construction Silicon epitaxial planar type 4.00.1 1.00.1 1.810.1 1.00.1 1.5MAX Absolute maximum ratings (T = 25C) a Parameter Symbol Conditions Limits Unit V Duty0.5 200 Repetitive peak reverse voltage V RM V Direct reverse voltage 200 Reverse voltage V R T = 45C a 0.8 On glass epoxy substrate I Average rectified foward current A o 60Hz half sin wave , Resistive load T= 130C l 1 60Hz half sin wave ,Non-repetitive at T=25C Non-repetitive forward surge current I j 20 A FSM Operating junction temperature T - 150 C j Storage temperature T - 55 to 150 C stg Electrical characteristics (T = 25C) j Parameter Symbol Conditions Min. Typ. Max. Unit I =0.8A - 0.81 0.95 F V Forward voltage V F I =1A - 0.82 0.98 F I V =200V Reverse current -0.01 10 A R R I =0.5A, I =1A, Irr=0.25I Reverse recovery time trr - 14 25 ns F R R R Junction to lead C / W Thermal resistance -- 20 th(j-l) www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.08 - Rev.C 1/4 2.60.1 3.500.12.2 3.50.05 1.750.1 0.85 8.00.2 3.710.1 3.710.08 3.05Data Sheet RF081M2STF Electrical characteristic curves 10 10000 T = 150 C j T = 125 C j 1000 1 100 T = 75 C j 0.1 T = 150 C j 10 T = 125 C j T = 25 C j 0.01 T = 75 C j 1 T = 25 C j 0.1 0.001 0 50 100 150 200 0 200 400 600 800 1000 1200 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 100 100 f = 1MHz I FSM T = 25 C a 8.3ms 8.3ms 1cyc. 10 10 T = 25 C j 1 1 0 5 10 15 20 25 30 110 100 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.08 - Rev.C 2/4 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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