Product Information

RF01VM2STE-17

RF01VM2STE-17 electronic component of ROHM

Datasheet
Rectifiers PNP Driver Transistor

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3692 ea
Line Total: USD 0.37

5694 - Global Stock
Ships to you between
Mon. 27 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4476 - WHS 1


Ships to you between
Tue. 28 May to Fri. 31 May

MOQ : 5
Multiples : 5
5 : USD 0.1056
50 : USD 0.0856
150 : USD 0.0756
500 : USD 0.068
3000 : USD 0.0621
6000 : USD 0.059

5694 - WHS 2


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1
1 : USD 0.3692
10 : USD 0.2565
100 : USD 0.1046
1000 : USD 0.0736
3000 : USD 0.0587
9000 : USD 0.0506
24000 : USD 0.0483
45000 : USD 0.046
99000 : USD 0.0437

2211 - WHS 3


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 20
Multiples : 20
20 : USD 0.078
100 : USD 0.0663
320 : USD 0.0533
860 : USD 0.0507
12000 : USD 0.0494

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Maximum Operating Temperature
Series
Packaging
Product
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Super Fast Recovery Diode RF01VM2S Data Sheet lSerise lDimensions (Unit : mm) lLand Size Figure (Unit : mm) +0.10 1.250.10 0.10 -0.05 Standard Fast Recovery 0.9 lApplications General rectification 00.1 UMD2 lFeatures Cathode 1) Small mold type (UMD2) +0.20 lStructure 0.70 -0.10 0.300.05 ROHM : UMD2 2) High speed switching JEDEC : SOD-323 dot (year,week,day,factory) Anode lConstruction lTaping Dimensions (Unit : mm) Silicon epitaxial planar type +0.1 f1.5 -0 +0.2 f1.0 -0 lAbsolute Maximum Ratings (T = 25C) a Parameter Symbol Conditions Limits Unit V Duty0.5 250 Repetitive peak reverse voltage V RM Reverse voltage V Direct voltage 250 V R I Repetitive peak forward current - 300 mA FM 60Hz half sin wave , Resistive load Average current I 100 mA o 60Hz half sin wave ,Non-repetitive at T =25C Non-repetitive forward surge current I j 1 A FSM T Operating junction temperature - 150 C j T - Storage temperature -55 to +150 C stg lElectrical Characteristics (T = 25C) j Parameter Symbol Conditions Min. Typ. Max. Unit Forward voltage V I =100mA - 1 1.2 V F F V =250V I Reverse current - 0.01 10 mA R R Reverse recovery time trr V =6V, I =10mA,R =50W Irr=0.1I - 10 50 ns R F L R www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.10 - Rev.A 1/4 1.700.10 2.500.20 0.40.1 0.60.1 0.8 2.1 Data Sheet RF01VM2S lElectrical Characteristic Curves 1000 1 T = 125 C T = 150 C j j 100 0.1 T = 75 C j 10 T = 150 C j 0.01 T = 25 C T = 125 C j j 1 T = 75 C j T = 25 C j 0.001 0.1 0 50 100 150 200 250 0 200 400 600 800 1000 1200 1400 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 10 10 f = 1MHz I FSM T = 25 C a 8.3ms 8.3ms 1cyc. 1 1 T = 25 C j 0.1 0.1 0 5 10 15 20 25 30 1 10 100 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.10 - Rev.A 2/4 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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