Product Information

RF05VA2STR

RF05VA2STR electronic component of ROHM

Datasheet
Diodes - General Purpose, Power, Switching DIODE FAST REC 200V 0.5A SOD-323
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

421: USD 0.0908 ea
Line Total: USD 38.23

67202 - Global Stock
Ships to you between
Tue. 21 May to Mon. 27 May
MOQ: 421  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
887 - WHS 1


Ships to you between
Tue. 28 May to Fri. 31 May

MOQ : 5
Multiples : 5
5 : USD 0.1215
50 : USD 0.0973
150 : USD 0.0852
500 : USD 0.0762
3000 : USD 0.069
6000 : USD 0.0653

376 - WHS 2


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 355
Multiples : 1
355 : USD 0.2816

67202 - WHS 3


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 421
Multiples : 1
421 : USD 0.0908
567 : USD 0.0675
1000 : USD 0.0567
2000 : USD 0.0537
3000 : USD 0.0534
6000 : USD 0.0518
12000 : USD 0.0505

2411 - WHS 4


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 355
Multiples : 1
355 : USD 0.2626

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Operating Temperature Range
Product
Brand
Maximum Reverse Leakage Current
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
Brand Category
LoadingGif

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Additional Infomation About Product

Data Sheet Super Fast Recovery Diode RF05VA2S Series Dimensions (Unit : mm) Land size figure (Unit : mm) Standard Fast Recovery 1.1 0.170.1 0.05 1.30.05 Applications High Frequency rectification TUMD2 Features 1)Small mold type. TUMD2 Structure 2)high switching speed 3)Low forward voltage 0.80.05 0.60.2 ROHM : TUMD2 0.1 dot (year week factory) + day Construction Silicon epitaxial planer Taping dimensions (Unit : mm) 1.550.1 0.250.05 4.00.1 2.00.05 0 4.00.1 1.00.2 1.430.05 0 0.90.08 Absolute maximum ratings (TI=25 C) Parameter Conditions Symbol Limits Unit Repetitive peak reverse voltage V 200 V RM Reverse voltage V Direct voltage 200 V R Glass epoxy substrate mounted Average rectified forward current Io 0.5 A 60Hz half sin wave,resistive load 60Hz half sin wave, Non-repetitive I Forward current surge peak 6 A FSM one cycle peak value, Tj=25C Junction temperature Tj 150 C Storage temperature C Tstg 55 to 150 Electrical characteristics (Tj=25 C) Parameter Conditions Symbol Min. Typ. Max. Unit V I =0.5A Forward voltage 0.85 0.98 V F F Reverse current I V =200V R 0.01 10 A R I =0.5A,I =1A,Irr=0.25I Reverse recovery time trr F R R 11 25 ns www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.10 - Rev.A 1/4 1.90.1 2.50.2 3.50.05 1.750.1 2.75 8.00.2 2.80.05 2.0 0.8 0.5Data Sheet RF05VA2S 10 10000 Tj=150 C Tj=150 C Tj=125 C 1000 1 Tj=125 C 100 Tj=75 C Tj=25 C 10 0.1 Tj=25 C Tj=75 C 1 0.01 0 300 400 500 600 700 800 900 1000 1100 1200 1300 0 50 100 150 200 FORWARD VOLTAGEV (mV) REVERSE VOLTAGEV (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 100 900 f=1MHz I =0.5A F 890 880 870 860 10 850 840 AVE:848.8mV 830 820 810 1 800 0 5 10 15 20 25 30 V DISPERSION MAP F REVERSE VOLTAGE : V (V) R V -Ct CHARACTERISTICS R 100 30 f=1MHz V =200V R V =0V R 10 25 AVE:24.3pF AVE:1.8nA 1 20 Ct DISPERSION MAP I DISPERSION MAP R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.10 - Rev.A 2/4 REVERSE CURRENT : I (nA) CAPACITANCE BETWEEN R FORWARD CURRENT: I (A) F TERMINALS:Ct(pF) CAPACITANCE BETWEEN FORWARD VOLTAGE : V (mV) F REVERSE CURRENT: I (nA) R TERMINALS:Ct(pF)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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