Product Information

RB550EAFHTR

RB550EAFHTR electronic component of ROHM

Datasheet
Schottky Diodes & Rectifiers 30V Vr 0.7A Io SBD SOT-25T 0.7A
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5604 ea
Line Total: USD 0.56

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 1
Multiples : 1
1 : USD 0.5604
10 : USD 0.4619
100 : USD 0.3219
500 : USD 0.303
1000 : USD 0.2957

0 - WHS 2


Ships to you between Fri. 24 May to Tue. 28 May

MOQ : 1
Multiples : 1
1 : USD 0.4901
10 : USD 0.4185
100 : USD 0.29
500 : USD 0.2337
1000 : USD 0.1887
3000 : USD 0.1656
6000 : USD 0.1524
9000 : USD 0.1488

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Maximum Operating Temperature
Qualification
Packaging
Brand
Product Type
Factory Pack Quantity :
Subcategory
Vr - Reverse Voltage
Cnhts
Hts Code
Mxhts
LoadingGif

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Additional Infomation About Product

RB550EAFH Schottky Barrier Diode (AEC-Q101 qualified) Data sheet Outline V 30 V R I 0.7 A o I 12 A FSM Features Inner Circuit High reliability Small mold type Low V F Application Packaging Specifications General rectification Packing Embossed Tape Reel Size(mm) 180 Taping Width(mm) 8 Structure Basic Ordering Unit(pcs) 3000 Silicon epitaxial planar Taping Code TR Marking D2Q Absolute Maximum Ratings (T =25C unless otherwise specified) a Parameter Symbol Conditions Limits Unit V Repetitive peak reverse voltage Duty0.5 30 V RM V Reverse voltage Reverse direct voltage 30 V R Glass epoxy mounted I 60Hz half sin waveform Average rectified forward current 0.7 A o resistive loadper dIode t=100secNon-repetitiveone cycle I Peak forward surge current 12 A FSM per diodeT =25 a (1) T Junction temperature - 150 j T Storage temperature - -40 150 stg Note(1) To avoid occurrence of thermal runaway actual board is to be designed to fulfill dP /dT<1/R . d j th(j-a) (T =25C unless otherwise specified) Characteristics a Value per diode Parameter Symbol Conditions Min. Typ. Max. Unit V I =0.7A Forward voltage 0.36 0.45 0.49 V F F I V =10V R1 - 1 30 A R Reverse current I V =30V - 5 50 A R2 R C=100pFR=1.5k Electrostatic Discharge ESD 15 - - kV 1 discharge at each voltage polarity Attention www.rohm.com 1/5 2017/03/21 Rev.001 2016 ROHM Co., Ltd. All rights reserved.RB550EAFH Data sheet Characteristic Curves www.rohm.com 2/5 2016 ROHM Co., Ltd. All rights reserved. 2017/03/21 Rev.001

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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