Product Information

RB550VA-30TR

RB550VA-30TR electronic component of ROHM

Datasheet
Schottky Diodes & Rectifiers SCHOTTKY 30V 1A
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

391: USD 0.0905 ea
Line Total: USD 35.39

2899 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 391  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1940 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 336
Multiples : 1
336 : USD 0.3037
500 : USD 0.2926
1000 : USD 0.2831

2899 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 391
Multiples : 1
391 : USD 0.0905
500 : USD 0.0875
1000 : USD 0.0864
2000 : USD 0.085

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Operating Temperature Range
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
Height
Length
Termination Style
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

Schottky Barrier Diode RB550VA-30 Data Sheet lApplications lDimensions (Unit : mm) lLand size figure (Unit : mm) General rectification 1.1 0.170.1 0.05 1.30.05 lFeatures 1)Small mold type TUMD2 2)Low V Low I F, R 3)High reliability TUMD2 lConstruction Silicon epitaxial planar lStructure 0.80.05 0.60.2 ROHM : TUMD2 0.1 dot (year week factory) + day lTaping specifications (Unit : mm) 1.550.1 0.250.05 4.00.1 2.00.05 0 1.430.05 4.00.1 1.00.2 0 0.90.08 lAbsolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit V Reverse voltage (repetitive) 30 V RM Reverse voltage (DC) V 30 V R Average rectified forward current 1 Io A Forward current surge peak (60Hz1cyc) I 3 A FSM Junction temperature Tj 150 C Storage temperature -40 to +150 Tstg C lElectrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions V 1 - 0.45 0.49 V I =700mA F F Forward voltage V 2 - 0.48 0.52 V I =1A F F V =10V Reverse current I - 1 30 A R R www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.12 - Rev.E 1/3 Not Recommended for New Designs 1.90.1 2.50.2 3.50.05 1.750.1 2.75 8.00.2 2.80.05 0.8 0.5 2.0Data Sheet RB550VA-30 100000 1 1000 Ta=75 Ta=150 f=1MHz 10000 Ta=125 Ta=125 1000 0.1 Ta=150 100 Ta=25 Ta=75 100 Ta=-25 10 Ta=25 0.01 10 1 Ta=-25 0.1 0.01 0.001 1 0 5 10 15 20 25 30 0 100 200 300 400 500 600 0 5 10 15 20 25 30 FORWARD VOLTAGEVF(mV) REVERSE VOLTAGE:VR(V) REVERSE VOLTAGEVR(V) VF-IF CHARACTERISTICS VR-IR CHARACTERISTICS VR-Ct CHARACTERISTICS 490 200 30 Ta=25 Ta=25 Ta=25 190 IF=0.7A f=1MHz VR=30V 25 480 n=30pcs 180 n=30pcs VR=0V n=10pcs 170 20 470 160 15 150 460 140 10 130 AVE:3.141uA 450 120 5 AVE:149.9pF 110 AVE:459.6mV 0 440 100 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 30 20 30 Ta=25 Ifsm Ifsm 1cyc IF=0.5A 25 25 Ifsm IR=1A 15 8.3ms 8.3ms Irr=0.25*IR 8.3ms 8.3ms 8.3ms 20 20 n=10pcs 1cyc 1cyc 15 15 10 AVE:15.1A 10 10 5 AVE:8.3ns 5 5 0 0 0 1 10 100 trr DISPERSION MAP NUMBER OF CYCLES IFSM DISRESION MAP IFSM-CYCLE CHARACTERISTICS 30 1 Mounted on epoxy board 1000 IM=10mA IF=0.2A 25 Ifsm 0.8 t time 1ms Rth(j-a) 20 D=1/2 300us 0.6 Sin( 180) 15 100 Rth(j-c) DC 0.4 10 0.2 5 0 0 10 0 0.5 1 1.5 1 10 100 0.001 0.1 10 1000 AVERAGE RECTIFIED TIME:t(ms) TIME:t(s) FORWARD CURRENTIo(A) IFSM-t CHARACTERISTICS Rth-t CHARACTERISTICS Io-Pf CHARACTERISTICS www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.12 - Rev.E 2/3 Not Recommended for New Designs PEAK SURGE PEAK SURGE FORWARD CURRENT:IFSM(A) FORWARD VOLTAGE:VF(mV) FORWARD CURRENT:IF(A) FORWARD CURRENT:IFSM(A) REVERSE CURRENT:IR(uA) TRANSIENT REVERSE CURRENT:IR(nA) REVERSE RECOVERY TIME:trr(ns) THAERMAL IMPEDANCE:Rth (/W) PEAK SURGE CAPACITANCE BETWEEN CAPACITANCE BETWEEN FORWARD POWER FORWARD CURRENT:IFSM(A) TERMINALS:Ct(pF) TERMINALS:Ct(pF) DISSIPATION:Pf(W)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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