Ships to you between Tue. 28 May to Thu. 30 May
HP8KA1TB ROHM
Transistors Switching - Resistor Biased DUAL PNP 50V 100MA SOT-457 Stock : 3000
MOSFET 30V Nch+Nch Power MOSFET Stock : 680
Transistors Switching - Resistor Biased DUAL PNP 50V 30MA Stock : 0
ROHM Semiconductor Bipolar Transistors - Pre-Biased DUAL PNP 50V 100MA Stock : 3050
Transistors Switching - Resistor Biased DUAL PNP 50V 50MA SOT-457 Stock : 5447
MOSFET 30V Nch+Nch Si MOSFET Stock : 0
MOSFET 30V NCH+PCH MIDDLE POWER Stock : 861
MOSFET 30V NCH+NCH POWER Stock : 2954
MOSFET 60V NCH+PCH POWER Stock : 2550
MOSFET 100V NCH+PCH POWER Stock : 1424
MOSFET SELF PROTECTED FET Stock : 2500
ON Semiconductor MOSFET 65V SMARTFET Stock : 30862
N-Channel 60 V 26A (Tc) 68W (Tc) Surface Mount D²PAK (TO-263) Stock : 1590
MOSFET NCH 100A 100V TO-263 Stock : 0
MOSFET Power MOSFET 800V 2.9A 4.5 Ohm Single N-Channel DPAK Stock : 0
MOSFET NFET DPAK 600V 5.9A Stock : 1380
MOSFET NFET T0220FP 600V 4A 1.8R Stock : 0
N-Channel 600 V 4.8A (Tc) 30W (Tc) Through Hole TO-220-2 Full Pack Stock : 1
MOSFET NFET 600V 6A 980 Stock : 0
MOSFET N Trench 600V 10A (Tc) 4.5V @ 100uA 750 mΩ @ 5A,10V TO-220FP RoHS Stock : 0
HP8KA1 Datasheet 30V Nch+Nch Power MOSFET llOutline V 30V DSS R (Max.) 5.0m DS(on) HSOP8 I 14A D P 3W D llInner circuit llFeatures 1) Low on - resistance 2) Pb-free plating RoHS compliant 3) Halogen Free llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Load Switch Quantity (pcs) 2500 LiB charging and discharging switch Taping code TB Marking HP8KA1 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS *1 I Continuous drain current 14 A D *2 I Pulsed drain current 28 A DP V Gate - Source voltage 20 V GSS *3 P Power dissipation 3 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 1/11 20200305 - Rev.004 HP8KA1 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 Thermal resistance, junction - ambient R - - 41 /W thJA llElectrical characteristics (T = 25C) <It is the same characteristics for the Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 21 - mV/ temperature coefficient T referenced to j Zero gate voltage I V = 24V, V = 0V - - 1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 100 nA GSS GS DS V V = 10V, I = 10mA Gate threshold voltage 1.0 - 2.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -3 - mV/ temperature coefficient T referenced to j V = 10V, I = 14A - 3.5 5.0 GS D Static drain - source *4 R m DS(on) on - state resistance V = 4.5V, I = 14A - 5.0 7.0 GS D Forward Transfer *4 Y V = 5V, I = 14A 14 - - S fs DS D Admittance *1 Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 Mounted on a Cu board (40400.8mm) *4 Pulsed www.rohm.com 2/11 20200305 - Rev.004 2019 ROHM Co., Ltd. All rights reserved.