HP8S36 Datasheet 30V Nch+Nch Middle Power MOSFET llOutline Tr1:Nch Tr2:Nch Symbol V 30V 30V DSS HSOP8 R (Max.) 8.8m 2.4m DS(on) I 27A 80A D P 22W 29W D llFeatures llInner circuit 1) Low on - resistance. 2) Pb-free lead plating RoHS compliant. 3) Halogen Free. 4) Built in Schottky-barrier diode(Tr2) llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 330 Switching Tape width (mm) 12 Type Basic ordering unit (pcs) 2500 Taping code TB Marking HP8S36 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Value Parameter Symbol Unit Tr1:Nch Tr2:Nch V Drain - Source voltage 30 30 V DSS *1 I 27 80 A D Continuous drain current I 12 32 A D *2 I Pulsed drain current 48 128 A DP Gate - Source voltage V 20 12 V GSS *3 I Avalanche current, single pulse 12 32 A AS *3 Avalanche energy, single pulse E 5.3 39.3 mJ AS *1 P element 22 29 W D Power dissipation *4 total P 3.0 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/16 20160515 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. HP8S36 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 R Tr1:Nch - - 5.6 /W thJC Thermal resistance, junction - case *1 R Tr2:Nch - - 4.3 /W thJC *4 R Thermal resistance, junction - ambient total - - 41.7 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Type Conditions Unit Min. Typ. Max. V = 0V, I = 1mA Tr1 30 - - GS D Drain - Source breakdown V V (BR)DSS voltage V = 0V, I = 1mA Tr2 30 - - GS D V I = 1mA, referenced to 25 Tr1 - 28 - (BR)DSS D Breakdown voltage mV/ temperature coefficient T I = 1mA, referenced to 25 j Tr2 - 18.5 - D V = 24V, V = 0V Tr1 - - 1 DS GS Zero gate voltage I A DSS drain current Tr2 V = 24V, V = 0V - - 500 DS GS Tr1 V = 0V, V = 20V - - 100 DS GS Gate - Source I nA GSS leakage current Tr2 V = 0V, V = 10V - - 100 DS GS Tr1 V = V , I = 1mA 1.3 - 2.5 DS GS D Gate threshold V V GS(th) voltage Tr2 V = V , I = 1mA 1.3 - 2.5 DS GS D V I = 1mA, referenced to 25 Tr1 - -3.87 - D GS(th) Gate threshold voltage mV/ temperature coefficient T I = 1mA, referenced to 25 Tr2 - -2.38 - j D V = 10V, I = 12A - 6.7 8.8 GS D Tr1 V = 4.5V, I = 12A - 9.1 13.3 GS D Static drain - source *5 R m DS(on) on - state resistance V = 10V, I = 32A - 2.0 2.4 GS D Tr2 V = 4.5V, I = 32A - 2.3 2.8 GS D Tr1 - 2.3 - Gate resistance R f=1MHz, open drain G Tr2 - 0.85 - Tr1 V = 5V, I = 12A 10 - - DS D Forward Transfer *5 Y S fs Admittance Tr2 V = 5V, I = 32A 30 - - DS D *1Tc=25 , Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 L 0.05mH, V = 15V, R = 25, STARTING T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a Cu board (40400.8mm) *5 Pulsed www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2/16 20160515 - Rev.001