Product Information

BSM600C12P3G201

BSM600C12P3G201 electronic component of ROHM

Datasheet
Discrete Semiconductor Modules 1200V Vdss; 576A ID SiC Mod; SICSTD02
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1867.0856 ea
Line Total: USD 1867.09

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1
1 : USD 1867.0856

0 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 4
Multiples : 4
4 : USD 1495.4485
12 : USD 1435.2
28 : USD 1435.2
52 : USD 1435.2
252 : USD 1435.2
500 : USD 1435.2
1000 : USD 1435.2

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Type
Vf - Forward Voltage
Vgs - Gate-Source Voltage
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Technology
Configuration
Brand
Transistor Polarity
Typical Delay Time
Fall Time
Id - Continuous Drain Current
Pd - Power Dissipation
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Vds - Drain-Source Breakdown Voltage
Vgs Th - Gate-Source Threshold Voltage
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Additional Infomation About Product

SiC Power Module Datasheet BSM600C12P3G201 Application Circuit diagram 1 Motor drive 7 Converter Photovoltaics, wind power generation. 9 ( N. C ) 8 3, 4 Features 6 5 10 1) Low surge, low switching loss. 1TC 11 2) High-speed switching possible. 2 Do not connect anything to NC pin. 3) Reduced temperature dependence. Construction This product is a chopper module consisting of SiC-UMOSFET and SiC-SBD from ROHM. Dimensions & Pin layout (Unit : mm) D1 SS 1 G 1 TH1 TH2 8 9 7 10 1 1 4 1 3 2 6 5 G 2 S S2 www.rohm.com 1/10 30.Mar.2018 - Rev.001 2018 ROHM Co., Ltd. All rights reserved. BSM600C12P3G201 Datasheet Absolute maximum ratings (T = 25C) j Symbol Parameter Conditions Ratings Unit V G-S short 1200 Drain - Source Voltage DSS V Repetitive Reverse Voltage Clamp diode 1200 RRM V Gate - Source Voltage (+) D-S short 22 V GSS V D-S short Gate - Source Voltage (-) -4 GSS G - S Voltage (t <300nsec) V D-S short GSSsurge -4 to 26 surge I DC(Tc=60C) VGS=18V 576 D I Drain Current DC(Tc=50 ) VGS=18V 600 D Note 1) I Pulse (Tc = 60C 1ms VGS=18V 1200 DRM Note 2) I DC(Tc=60C) VGS=18V 576 S I DC(Tc=50C) VGS=18V 600 A S Source Current Note 1) I Pulse (Tc = 60C 1ms VGS=18V 1200 SRM Note 2) I Pulse (Tc = 60C 1ms VGS=0V SRM Note 2) 1200 I DC(Tc = 60 ) 600 F Forward Current (clamp diode) Note 1) I Pulse (Tc = 60 1ms 1200 FRM Note 2 Total Power Dissipation Ptot Tc = 25C 2460 W Note 3) Max Junction Temperature Tjmax 175 Tjop Junction Temperature -40 to 150 C Tstg Storage Temperature -40 to 125 Visol Terminals to baseplate f = 60Hz AC 1 min. 2500 Vrms Isolation Voltage Main Terminals : M6 screw 4.5 - Mounting Torque N m Mounting to heat sink M5 screw 3.5 Note 1) Case temperature (Tc) is defined on the surface of base plate just under the chips. Note 2) Repetition rate should be kept within the range where temperature rise if die should not exceed Tjmax. Note 3) Tj is less than 175C. Example of acceptable VGS waveform +26V t s u r g e +22V -4V www.rohm.com 30.Mar.2018 - Rev.001 2018 ROHM Co., Ltd. All rights reserved. 2/10

HS Compliance

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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