Product Information

BSS64AT116

BSS64AT116 electronic component of ROHM

Datasheet
Bipolar Transistors - BJT TRANSISTOR FOR HIGH VOLT AMP
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4025 ea
Line Total: USD 0.4

3404 - Global Stock
Ships to you between
Thu. 23 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
3384 - WHS 1


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 0.4025
10 : USD 0.2795
100 : USD 0.1162
1000 : USD 0.0908
3000 : USD 0.0736
9000 : USD 0.0587
24000 : USD 0.0552
45000 : USD 0.0483
99000 : USD 0.0471

2846 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 455
Multiples : 1
455 : USD 0.2028
500 : USD 0.1988

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
LoadingGif

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Additional Infomation About Product

BSS64A Datasheet High-voltage Amplifier Transistor (100V, 100mA) llOutline SOT-23 Parameter Value V 100V CEO I 100mA C SST3 llFeatures llInner circuit 1)High breakdown voltage. (BV =100V) CEO 2)Complements the BSS63A. llApplication HIGH VOLTAGE AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-23 BSS64A 2924 T116 180 8 3000 K9F (SST3) www.rohm.com 1/6 20190410 - Rev.001 2019 ROHM Co., Ltd. All rights reserved. Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 120 V CBO V Collector-emitter voltage 100 V CEO V Emitter-base voltage 6 V EBO I 100 mA C Collector current *1 I 200 mA CP *2 P 200 mW D Power dissipation *3 P 350 mW D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 10A 120 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 100 - - V CEO C voltage Emitter-base breakdown voltage BV I = 10A 6 - - V EBO E V = 90V - - 100 nA CB I Collector cut-off current CBO V = 90V, T = 150 - - 50 A CB a I Emitter cut-off current V = 6V - - 100 nA EBO EB V 1 I = 25mA, I = 2.5mA - 80 210 mV CE(sat) C B Collector-emitter saturation voltage V 2 CE(sat) I = 100mA, I = 10mA - 160 300 mV C B Base-emitter saturation voltage V I = 25mA, I = 2.5mA - 770 900 mV BE(sat) C B Base-emitter turn V V = 6V, I = 1mA 580 - 800 mV BE(on) CE C on voltage h 1 V = 1V, I = 10mA 30 - - FE CE C DC current gain - h 2 V = 1V, I = 25mA 30 - - FE CE C V = 5V, I = -1mA, CE E f Transition frequency - 140 - MHz T f = 100MHz V = 10V, I = 0A CB E C Output capacitance - 2.5 4.0 pF ob f = 1MHz *1 Pw=10ms,Single pulse. *2 Each terminal mounted on a reference land. *3 Mounted on a ceramic board (7.05.00.6mm). www.rohm.com 2/6 20190410 - Rev.001 2019 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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