SiC Power Module BSM300D12P2E001 Datasheet Application Circuit diagram Motor drive 1 7 Inverter, Converter 9 Photovoltaics, wind power generation. 8 3, 4 Induction heating equipment. 6 5 2 10 Features NTC 11 1) Low surge, low switching loss. 2) High-speed switching possible. 3) Reduced temperature dependence. Construction This product is a half bridge module consisting of SiC-DMOSFET and SiC-SBD from ROHM. Dimensions & Pin layout (Unit : mm) www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2018.02 - Rev.C 1/9Datasheet BSM300D12P2E001 Absolute maximum ratings (T = 25C) j Parameter Conditions Limit Symbol Unit Drain-source voltage V G-S short 1200 DSS 22 Gate-source voltage() V D-S short V GSS Gate-source voltage() 6 G - S Voltage (t <300nsec) V D-S short 10 to 26 surge GSS surge I DC (T =60C) 300 D c 1 Drain current * 2 I 600 Pulse (T =60C) 1ms * DRM c A I DC (T =60C ) 300 S c 1 Source current * 2 I 600 Pulse (Tc=60C) 1ms * SRM 3 T =25C Ptot 1875 W Total power disspation * c T 175 Max Junction Temperature jmax Operating junction temperature T 40 to150 C jop Storage temperature T 40 to125 stg Terminals to baseplate, Isolation voltage Visol 2500 Vrms f=60Hz AC 1min. 4.5 Main Terminals : M6 screw Mounting torque N m Mounting to heat shink : M5 screw 3.5 (*1) Case temperature (T ) is defined on the surface of base plate just under the chips. c (*2) Repetition rate should be kept within the range where temperature rise if die should not exceed T j max. (*3) T is less than 175C j Example of acceptable V waveform GS 26V t surge 22V 0V t surge 6V 10V www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2018.02 - Rev.C 2/9