Product Information

BR93H46RF-2LBH2

BR93H46RF-2LBH2 electronic component of ROHM

Datasheet
EEPROM Microwire BUS 1Kbit(64x16bit)
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.2221 ea
Line Total: USD 1.22

222 - Global Stock
Ships to you between
Mon. 20 May to Wed. 22 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
222 - WHS 1


Ships to you between Mon. 20 May to Wed. 22 May

MOQ : 1
Multiples : 1
1 : USD 1.035
10 : USD 0.9407
100 : USD 0.8591
500 : USD 0.8303
1000 : USD 0.7981
2500 : USD 0.7751
5000 : USD 0.751
10000 : USD 0.7372
25000 : USD 0.713

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Interface Type
Memory Size
Organisation
Supply Voltage - Min
Supply Voltage - Max
Minimum Operating Temperature
Maximum Operating Temperature
Maximum Clock Frequency
Data Retention
Supply Current - Max
Packaging
Brand
Operating Supply Current
Operating Supply Voltage
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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Additional Infomation About Product

Datasheet Serial EEPROM Series Industrial EEPROM 125 Operation Microwire BUS EEPROM (3-wire) BR93H46RF-2LB GeneralDescription Package W(Typ.) x D(Typ.) x H(Max.) This is the product guarantees long time support in Industrial market. BR93H46RF-2LB is a serial EEPROM of serial 3-line interface method Features Long Time Support a Product for Industrial Applications. Conforming to Microwire BUS SOP8 Withstands Electrostatic Voltage up to 6kV 5.00mm x 6.20mm x 1.71mm (HBM method typ) Wide Temperature Range -40 to +125 Same package line-up and same pin configuration 2.5V to 5.5V Single Supply Voltage Operation Application Address Auto Increment Function at READ Industrial Equipment Operation Prevention of write mistake Write prohibition at power on Write prohibition by command code Write mistake prevention circuit at low voltage Self-timed programming cycle Program Condition Display by READY / BUSY Low Supply Current Write Operation (5V) : 0.8mA (Typ) Read Operation (5V) : 0.5mA (Typ) Standby Operation (5V) 0.1A (Typ) Compact package High-Reliability using ROHM Original Double-Cell structure More than 100 years data retention More than 1 million write cycles Data set to FFFFh on all addresses at shipment BR93H46RF-2LB Capacity Bit Format Product Name Supply Voltage Package 1Kbit 6416 BR93H46RF-2LB 2.5V to 5.5V SOP8 Product structure : Silicon monolithic integrated circuit This product has no designed protection against radioactive rays www.rohm.com TSZ02201-0R1R0G100250-1-2 2013 ROHM Co., Ltd. All rights reserved. 1/25 TSZ2211114001 27.Feb.2014 Rev.002DatasheetDatasheet BR93H46RF-2LB Absolute Maximum Ratings (Ta=25) Parameter Symbol Limits Unit Remarks V Supply Voltage CC -0.3 to +6.5 V When using at Ta=25 or higher 4.5mW to be reduced per 1. Permissible Dissipation Pd 0.56 W Storage Temperature Range Tstg -65 to +150 Operating Temperature Range Topr -40 to +125 Input Voltage/Output Voltage -0.3 to V+0.3V CC Memory Cell Characteristics (V =2.5V to 5.5V) CC Limits Parameter Unit Conditions Min Typ Max 1,000,000 - - Cycles Ta85 (1) Write Cycles 500,000 - - Cycles Ta105 300,000 - - Cycles Ta125 100 - - Years Ta25 (1) Data Retention 60 - - Years Ta105 50 - - Years Ta125 (1) Not 100% TESTED Recommended Operating Conditions Parameter Symbol Limits Unit Supply Voltage V 2.5 to 5.5 CC V Input Voltage V 0 to V IN CC www.rohm.com TSZ02201-0R1R0G100250-1-2 2013 ROHM Co., Ltd. All rights reserved. 2/25 27.Feb.2014 Rev.002 TSZ2211115001

HS Compliance

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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