Product Information

BR93H46RFVM-2CTR

BR93H46RFVM-2CTR electronic component of ROHM

Datasheet
SERIAL EEPROM, 1.25MHZ, MSOP-8

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.9652 ea
Line Total: USD 0.97

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 0.5353
10 : USD 0.4738
100 : USD 0.4152
500 : USD 0.4099
1000 : USD 0.3984
2500 : USD 0.3532

0 - WHS 2


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 0.4199
10 : USD 0.3787
100 : USD 0.3351
500 : USD 0.3351
1000 : USD 0.3264
3000 : USD 0.299
9000 : USD 0.2891
24000 : USD 0.2891

     
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Supply Voltage - Max
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Supply Current - Max
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Msl
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Mxhts
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Datasheet Serial EEPROM Series Automotive EEPROM 125 Operation Microwire BUS EEPROM (3-wire) BR93H46-2C GeneralDescription Package (Typ) (Typ) (Max) BR93H46-2C is a serial EEPROM of serial 3-line MSOP8 2.90mm x 4.00mm x 0.90mm interface method TSSOP-B8 3.00mm x 6.40mm x 1.20mm SOP8 5.00mm x 6.20mm x 1.71mm SOP-J8 4.90mm x 6.00mm x 1.65mm Features Conforming to Microwire BUS Withstands Electrostatic Voltage up to 6kV (HBM method typ Wide Temperature Range -40 to +125 Same package line-up and same pin configuration 2.5V to 5.5V Single Supply Voltage Operation Address Auto Increment Function at READ Operation Prevention of write mistake Write prohibition at power on Write prohibition by command code Write mistake prevention circuit at low voltage TSSOP-B8 MSOP8 Self-timed programming cycle Program Condition Display by READY / BUSY Low Supply Current Write Operation (5V) : 0.8mA (Typ) Read Operation (5V) : 0.5mA (Typ) Standby Operation (5V) : 0.1A (Typ) Compact package MSOP8 / TSSOP-B8 / SOP8 / SOP-J8 High-Reliability using ROHM Original Double-Cell structure More than 50 years data retention (Ta125) More than 300,000 write cycles (Ta125) Data set to FFFFh on all addresses at shipment SOP-J8 SOP8 AEC-Q100 Qualified BR93H46-2C MSOP8 TSSOP-B8 SOP8 SOP-J8 Package Type Product Name Capacity Bit Format Supply Voltage RFVM RFVT RF RFJ 1Kbit 6416 BR93H46-2C 2.5V to 5.5V Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays www.rohm.com TSZ02201-0R1R0G100010-1-2 2012 ROHM Co., Ltd. All rights reserved. 1/29 TSZ2211114001 16.Feb.2016 Rev.003DatasheetDatasheet BR93H46-2C Absolute Maximum Ratings (Ta=25) Parameter Symbol Limits Unit Supply Voltage V -0.3 to +6.5 V CC (1) 380 (MSOP8) (2) 410 (TSSOP-B8) Permissible Dissipation P mW d (3) 560 (SOP8) (4) 560 (SOP-J8) Storage Temperature Range Tstg -65 to +150 Operating Temperature Range Topr -40 to +125 Input Voltage/Output Voltage -0.3 to VCC+0.3 V When using at Ta=25 or higher, 3.1mW(1), 3.3mW(2) , 4.5mW(3,4),to be reduced per 1. Memory Cell Characteristics (V =2.5V to 5.5V) CC Limits Parameter Unit Conditions Min Typ Max 1,000,000 - - Cycles Ta85 (5) Write Cycles 500,000 - - Cycles Ta105 300,000 - - Cycles Ta125 100 - - Years Ta25 (5) Data Retention 60 - - Years Ta105 50 - - Years Ta125 (5) Not 100% TESTED Recommended Operating Conditions Unit Parameter Symbol Limits Supply Voltage V 2.5 to 5.5 CC V Input Voltage V 0 to V IN CC www.rohm.com TSZ02201-0R1R0G100010-1-2 2012 ROHM Co., Ltd. All rights reserved. 2/29 16.Feb.2016 Rev.003 TSZ2211115001

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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