Product Information

BAV99T116

BAV99T116 electronic component of ROHM

Datasheet
Diodes - General Purpose, Power, Switching SWITCH HI SPEED
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 3000
Multiples : 3000
3000 : USD 0.0536
6000 : USD 0.0536
9000 : USD 0.0536
12000 : USD 0.0536
N/A

Obsolete
0 - WHS 2

MOQ : 3000
Multiples : 3000
3000 : USD 0.0611
N/A

Obsolete
0 - WHS 3

MOQ : 5
Multiples : 1
5 : USD 0.1381
50 : USD 0.1143
150 : USD 0.1024
500 : USD 0.0936
2500 : USD 0.0865
5000 : USD 0.0829
N/A

Obsolete
0 - WHS 4

MOQ : 1
Multiples : 1
1 : USD 0.9325
10 : USD 0.647
100 : USD 0.1295
1000 : USD 0.104
3000 : USD 0.0951
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Packaging
Operating Temperature Range
Brand
Factory Pack Quantity :
Category
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Additional Infomation About Product

BAV70 / BAW56 / BAV99 Diodes Switching diode BAV70 / BAW56 / BAV99 This product is available only outside of Japan. z External dimensions (Unit : mm) z Application Ultra high speed switching 2.90.2 +0.2 0.95 0.1 1.90.2 z Features 0.450.1 0.95 0.95 1) Small surface mounting type. (SSD3) (1) (2) 2) High speed. (trr=1.5ns Typ.) 0~0.1 3) Four types of circuit configurations are available. 0.2Min. (3) +0.1 0.15 +0.1 0.69 0.4 0.05 z Construction Silicon epitaxial planar Each lead has same dimensions z Marking (Type No.) Product name Type No. BAV70 RA4 BAW56 RA1 BAV99 RA7 (Ex.) BAV70 z Equivalent circuits BAV99 BAV70 BAW56 1/3 +0.2 1.3 0.1 2.40.2 RA4BAV70 / BAW56 / BAV99 Diodes z Absolute maximum ratings (Ta=25C) Peak Mean Surge Peak DC Power Storage Junction forward rectifying current reverse reverse dissipation temperature temperature P / N Type Type current current (1s) voltage voltage (TOTAL) Tj (C) IFM (mA) IF (mA) Isurge (A) VRM (V) VR (V) Pd (mW) Tstg (C) BAV70 75 70 450 215 4 150 55 to +150 N 300 BAW56 85 70 450 215 4 150 55 to +150 P 225 BAV99 85 75 450 215 4 150 55 to +150 N 300 z Electrical characteristics (Ta=25C) Forward voltage Reverse current Capacitance between terminals Reverse recovery time Type Cond. Cond. Cond. Cond. VF (V) IR (A) CT (pF) trr (ns) Max. Max. Max. Max. IF (mA) VR (V) VR (V) f (MHz) VR (V) IF (mA) BAV70 1.25 150 2.5 70 1.5 0 1 4 10 10 BAW56 1.25 150 1.0 75 2.0 0 1 4 10 10 BAV99 1.25 150 1.0 75 1.5 0 1 4 10 10 z Electrical characteristic curves (Ta=25C) 125 50 1000 Ta=100C 20 100 100 75C 10 Ta=85C 50C 50C 5 25C 75 10 0C 25C 30C 2 0C 50 1 1 25C 0.5 25 0.1 0.2 0 0.1 0.01 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 20 30 40 50 0 AMBIENT TEMPERATURE : Ta (C) FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) Fig.1 Power attenuation curve Fig.2 Forward characteristics Fig.3 Reverse characteristics (P Type) (P Type) 50 f=1MHz 1000 Ta=100C 20 4 75C 100 10 Ta=85C 50C 50C 5 25C 0C 10 25C 30C 2 2 0C 1 1 P Type 25C 0.5 0.1 N Type 0.2 0.1 0 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 10 20 30 40 50 60 70 80 02 4 6 8 1012 14 16 18 20 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig.4 Forward characteristics Fig.5 Reverse characteristics Fig.6 Capacitance between (N Type) (N Type) terminals characteristics 2/3 FORWARD CURRENT : IF (mA) POWER DISSIPATION : Pd / Pd Max. (%) FORWARD CURRENT : IF (mA) REVERSE CURRENT : IR (nA) REVERSE CURRENT : IR (nA) CAPACITANCE BETWEEN TERMINALS : CT (pF)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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