BAW56HMFHT116 ROHM

BAW56HMFH Switching Diode (High speed switching) (AEC-Q101 qualified) Data sheet Outline V 100 V RM I 500 mA FM I 215 mA F I 4000 mA FSM Features Inner Circuit High reliability Small mold type Application Packaging Specifications Packing Embossed Tape High speed switching Reel Size(mm) 180 Taping Width(mm) 8 Basic Ordering Unit(pcs) 3000 Structure Taping Code T116 Epitaxial planar Marking D8Y (T = 25C) Absolute Maximum Ratings a Parameter Symbol Conditions Limits Unit V Repetitive peak reverse voltage - 100 V RM Reverse voltage V - 80 V R P Power dissipation Ta25 250 mW D I Repetitive peak reverse forward current Per diode 500 mA FM I Peak forward surge current t=1s 4000 mA FSM Per diode 215 mA I Forward current F Per device 125 mA Junction temperature T - 150 j T Storage temperature - -65 150 stg Cautionstatic electricity www.rohm.com 1/5 2017 ROHM Co., Ltd. All rights reserved. 2018/09/26 Rev.004 Not Recommended for New DesignsBAW56HMFH Data sheet (T = 25C) Characteristics Value per element a Parameter Symbol Conditions Min. Typ. Max. Unit I =1mA - - 715 mV F I =10mA - - 855 mV F V Forward voltage F I =50mA - - 1.00 V F I =150mA - - 1.25 V F V =80V T=25 - - 0.1 A R j I V =25V T=150 Reverse current - - 30 A R R j V =80V T=150 - - 50 A R j C V =0V f=1.0MHz Capacitance between terminals - - 2.0 pF t R t I =I =10mA R =100 I =1mA Reverse recovery time rr - - 4.0 ns F R L rr www.rohm.com 2/5 2017 ROHM Co., Ltd. All rights reserved. 2018/09/26 Rev.004 Not Recommended for New Designs