Product Information

1SS356TW11

1SS356TW11 electronic component of ROHM

Datasheet
RF Diode Standard - Single 35V 100 mA 200 mW UMD2
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

955: USD 0.0389 ea
Line Total: USD 37.15

54414 - Global Stock
Ships to you between
Fri. 17 May to Thu. 23 May
MOQ: 955  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
719 - WHS 1


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 0.3979
10 : USD 0.2806
100 : USD 0.1162
1000 : USD 0.0886
3000 : USD 0.0759
99000 : USD 0.0748

827 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 391
Multiples : 1
391 : USD 0.2369

17460 - WHS 3


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 391
Multiples : 1
391 : USD 0.227
500 : USD 0.2209
1000 : USD 0.2154
2500 : USD 0.2111

7760 - WHS 4


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 391
Multiples : 1
391 : USD 0.227
500 : USD 0.2209
1000 : USD 0.2165

54414 - WHS 5


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 955
Multiples : 1
955 : USD 0.0389
1000 : USD 0.0385
2000 : USD 0.0379
3000 : USD 0.0372
6000 : USD 0.0365

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Vr - Reverse Voltage
Maximum Diode Capacitance
Maximum Series Resistance @ Maximum IF
If - Forward Current
Vf - Forward Voltage
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Type
Brand
Reverse Current Ir
Factory Pack Quantity :
Height
Length
Termination Style
Width
Cnhts
Hts Code
Ir - Reverse Current
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

Band Switching Diode 1SS356 Applications Dimensions (Unit : mm) Land size figure (Unit : mm) High frequency switching 1.250.1 0.10.1 0.05 0.9MIN. Features 1)Ultra small mold type. (UMD2) 2)High reliability UMD2 Construction 0.70.2 Silicon epitaxial planar Structure 0.30.05 0.1 ROHM : UMD2 JEDEC : SOD-323 JEITA : SC-90/A dot (year week factory) Taping specifications (Unit : mm) 1.550.05 0.30.1 2.00.05 4.00.1 4.00.1 1.05 1.400.1 1.00.1 Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Forward current (DC) I 100 mA F V Reverse voltage (DC) 35 V R Junction temperature 125 Tj C Storage temperature Tstg 55 to 125 C Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions V - - 1.0 V I =10mA Forward voltage F F I Reverse current - - 10 nA V =25V R R Capacitance between terminals V =6V , f=1MHz Ct - - 1.2 pF R Forward operating resistance I =2mA , f=100MHz rf - - 0.9 F www.rohm.com 2011.08 - Rev.D 1/3 2011 ROHM Co., Ltd. All rights reserved. 1.70.1 2.50.2 3.50.05 1.750.1 2.75 8.00.2 0.8MIN. 2.80.1 2.1Data Sheet 1SS356 Ta=125 10 100 10 f=1MHz Ta=75 10 Ta=75 1 Ta=125 Ta=25 1 0.1 Ta=25 Ta= 25 1 0.1 0.01 Ta= 25 0.01 0.001 0.001 0.0001 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 102030 40 50 0 5 10 15 20 25 30 REVERSE VOLTAGE : V (V) FORWARD VOLTAGE : V (V) R F REVERSE VOLTAGE : V (V) R V -I CHARACTERISTICS V -I CHARACTERISTICS R R F F V -Ct CHARACTERISTICS R 850 0.1 10 Ta=25 0.09 Ta=25 f=100MHz I =10mA F V =25V R 840 0.08 n=30pcs n=30pcs 0.07 0.06 830 0.05 1 0.04 820 AVE:0.833V 0.03 AVE:0.0116nA 0.02 810 0.01 0 0.1 800 0.01 0.1 1 10 FORWARD CURRENT : I (mA) F I DISPERSION MAP V DISPERSION MAP R F rf-I CHARACTERISTICS F 5 20 1 Ta=25 0.9 Ta=25 V =6V Ifsm 1cyc R V =6V R 4 0.8 I =10mA F 15 f=1MHz RL=100 0.7 n=10pcs 8.3ms Irr=0.1*I R 3 0.6 n=10pcs 10 0.5 0.4 2 0.3 5 0.2 1 0.1 AVE:0.807pF AVE:5.60A AVE:1.20ns 0 0 0 I DISRESION MAP Ct DISPERSION MAP FSM trr DISPERSION MAP 1 10 100 Ta=25 0.9 9 f=100MHz Ifsm 8 0.8 I =2mA Ifsm F t n=10pcs 8.3ms 8.3ms 7 0.7 1cyc 0.6 6 5 0.5 10 4 0.4 3 0.3 2 0.2 1 0.1 AVE:0.602 0 1 0 110 100 0.1 1 10 100 TIME:t(ms) NUMBER OF CYCLES FORWARD CURRENT : I (mA) F I -t CHARACTERISTICS FSM I -CYCLE CHARACTERISTICS FSM rf DISPERSION MAP www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.08 - Rev.D FORWARD OPERATING FORWARD OPERATING CAPACITANCE BETWEEN FORWARD CURRENT : I (mA) F RESISTANCE:rf() RESISTANCE:rf( ) TERMINALS:Ct(pF) PEAK SURGE PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD VOLTAGE : V (mV) FORWARD CURRENT : I (A) F FSM FORWARD CURRENT : I (A) FSM PEAK SURGE CAPACITANCE BETWEEN REVERSE CURRENT : I (nA) R REVERSE RECOVERY TIME:trr(ns) FORWARD CURRENT : I (A) FSM TERMINALS:Ct(pF)

HS Compliance

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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