1SS390FHTE61 ROHM

Data Sheet AEC-Q101 Qualified Band Switching Diode 1SS390FH Applications Dimensions (Unit : mm) Land size figure (Unit : mm) High frequency switching 0.80.05 0.120.05 0.8 Features 1)Ultra small mold type. (EMD2) 2)High reliability EMD2 Construction Silicon epitaxial Structure 0.30.05 0.60.1 JEDEC :SOD-523 ROHM : EMD2 JEITA : SC-79 Taping specifications (Unit : mm) 0.20.05 1.50.05 2.00.05 4.00.1 1.55 0.05 0.2 0.5 0.950.06 4.00.1 2.00.05 0.900.05 Empty pocket 0.760.05 0.75 0.05 0 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Forward current (DC) I 100 mA F Reverse voltage (DC) V 35 V R Junction temperature 125 Tj C Storage temperature -55 to +125 Tstg C Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage V - - 1.0 V I =10mA F F I Reverse current - - 10 nA V =25V R R Capacitance between terminals Ct - - 1.2 pF V =6V , f=1MHz R Forward operating resistance =2mA , f=100MHz , RL=100 rf - - 0.9 I F www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.03 - Rev.D 2.402.450.0.015 1.251.300.06.06 00 1.20.05 1.60.1 0.6 0.6 3.50.05 1.750.1 8.00.15 1.25 0.06 1.260.05 0 0 1.7 1SS390FH Data Sheet 100 10 100 Ta=125 f=1MHz 10 Ta=125 10 Ta=75 1 Ta=75 1 0.1 Ta=25 1 Ta=25 0.01 Ta=-25 Ta=-25 0.1 0.001 0.1 0.0001 0.01 0 5 10 15 20 25 30 35 010 20 30 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 FORWARD VOLTAGEVF(V) REVERSE VOLTAGE:VR(V) REVERSE VOLTAGEVR(V) VR-Ct CHARACTERISTICS VF-IF CHARACTERISTICS VR-IR CHARACTERISTICS 0.2 860 1 Ta=25 Ta=25 0.18 0.9 Ta=25 IF=100mA VR=25V VR=6V 0.16 850 n=30pcs n=30pcs 0.8 f=1MHz 0.14 0.7 AVE:0.849pF n=10pcs 0.12 0.6 840 0.1 0.5 0.08 0.4 830 AVE:840.2mV AVE:0.0145nA 0.3 0.06 0.2 820 0.04 0.1 0.02 0 810 0 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 100 20 100 1cyc Ifsm 15 8.3ms 10 10 10 AVE:4.95A 1 Ifsm 1 Ifsm 5 t 8.3ms 8.3ms 1cyc 0 0.1 0.1 1 10 100 0.1 1 10 100 TIME:t(ms) IFSM DISPERSION MAP NUMBER OF CYCLES IFSM-t CHARACTERISTICS IFSM-CYCLE CHARACTERISTICS 1000 0.2 0.2 Rth(j-a) DC 0.15 Sin(180) D=1/2 DC D=1/2 100 Rth(j-c) Mounted on epoxy board 0.1 0.1 IF=10mA IM=1mA Sin(180) 10 Io 0A 0.05 time 1ms 0V VR 300us t D=t/T VR=40V 1 0 0 Tj=125 T 0.001 0.1 10 1000 0 0.05 0.1 0.15 0.2 025 50 75 100 125 TIME:t(s) AVERAGE RECTIFIED AMBIENT TEMPERATURE:Ta() Rth-t CHARACTERISTICS FORWARD CURRENTIo(A) Derating Curve(Io-Ta) Io-Pf CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.03 - Rev.D PEAK SURGE TRANSIENT FORWARD CURRENT:IFSM(A) FORWARD CURRENT:IF(mA) FORWARD VOLTAGE:VF(mV) THAERMAL IMPEDANCE:Rth (/W) FORWARD POWER PEAK SURGE REVERSE CURRENT:IR(nA) DISSIPATION:Pf(W) REVERSE CURRENT:IR(nA) FORWARD CURRENT:IFSM(A) AVERAGE RECTIFIDE CAPACITANCE BETWEEN CAPACITANCE BETWEEN PEAK SURGE FORWARD CURRENT:Io(A) TERMINALS:Ct(pF) TERMINALS:Ct(pF) FORWARD CURRENT:IFSM(A)