RKS100KG
Silicon Epitaxial Planar Diode for High Speed Switching
REJ03G1698-0100
Rev.1.00
Jul 03, 2008
Features
Low capacitance. (C = 2.0 pF max)
Short reverse recovery time. (t =3.0 ns max)
rr
Ultra small Resin Package (URP) is suitable for high density surface mounting and high speed assembly.
Ordering Information
Part No. Laser Mark Package Name Package Code
RKS100KG H2 URP PTSP0002ZA-A
Pin Arrangement
Cathode mark
Mark
12H2
1. Cathode
2. Anode
REJ03G1698-0100 Rev.1.00 Jul 03, 2008
Page 1 of 4 RKS100KG
Absolute Maximum Ratings
(Ta = 25C)
Item Symbol Value Unit
Peak reverse voltage V 85 V
RM
Reverse voltage V 80 V
R
1
Forward current I * 200 mA
F
2
Non-Repetitive peak forward surge current I * 4 A
FSM
Junction temperature Tj 150 C
Storage temperature Tstg 55 to +150 C
Notes: 1. Forward current with mounting on the board of Figure 1.
2. Within 1 s forward surge current.
43.4
10
0.6
0.5
0.6
Unit: mm
Figure 1 Board
Electrical Characteristics
(Ta = 25C)
Item Symbol Min Typ Max Unit Test Condition
Forward voltage V 0.8 V I = 10 mA
F1 F
V 1.2 I = 100 mA
F2 F
Reverse current I 0.1 A V = 80 V
R R
Capacitance C 2.0 pF V = 0 V, f = 1 MHz
R
1
Reverse recovery time* t 3.0 ns I = 10 mA, V = 6 V, R = 50
rr F R L
Note: 1. Reverse recovery time test circuit
DC
Supply
3k
0.1F
Sampling
Ro = 50 Pulse
Rin = 50
Generator Oscilloscope
Trigger
REJ03G1698-0100 Rev.1.00 Jul 03, 2008
Page 2 of 4
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