DSA120X200LB IXYS

DSA120X200LB preliminary V = 200 V RRM Schottky Diode Gen I = 2x 65 A FAV V = 0.82 V F High Performance Schottky Diode Low Loss and Soft Recovery Parallel legs Part number DSA120X200LB Marking on Product: DSA120X200LB Backside: isolated 6 7 5 4 8 = n/c 3 9 2 1 Features / Advantages: Applications: Package: SMPD Very low Vf Rectifiers in switch mode power Isolation Voltage: V~ 3000 Extremely low switching losses supplies (SMPS) Industry convenient outline Low Irm values Free wheeling diode in low voltage RoHS compliant Improved thermal behaviour converters Epoxy meets UL 94V-0 High reliability circuit operation Soldering pins for PCB mounting Low voltage peaks for reduced Backside: DCB ceramic protection circuits Reduced weight Low noise switching Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20190212b 2019 IXYS all rights reservedDSA120X200LB preliminary Ratings Schottky Symbol Definition Conditions min. typ. max. Unit T = 25C 200 V V max. non-repetitive reverse blocking voltage RSM VJ T = 25C 200 V V max. repetitive reverse blocking voltage RRM VJ reverse current, drain current I V = 2 0 0 V T = 25C 1 mA R R VJ V = 2 0 0 V T = 1 2 5 C 5 mA R VJ forward voltage drop V I = 6 0 A T = 25C 0.98 V F F VJ I = 1 2 0 A 1.22 V F T = C 0.82 V I = 6 0 A 150 F VJ I = 1 2 0 A 1.10 V F average forward current T = 1 3 0 C T = 1 7 5 C 65 A I FAV C VJ rectangular d = 0.5 V T = 1 7 5 C 0.51 V threshold voltage F0 VJ for power loss calculation only slope resistance r 2.7 m F thermal resistance junction to case 0.8 K/W R thJC thermal resistance case to heatsink K/W R 0.40 thCH P total power dissipation T = 25C 185 W tot C max. forward surge current t = 10 ms (50 Hz), sine V = 0 V T = 45C 700 A I R FSM VJ junction capacitance V = 2 4 V f = 1 MHz T = 25C 394 pF C J R VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20190212b 2019 IXYS all rights reserved