Product Information

TQP9224SR

TQP9224SR electronic component of Qorvo

Datasheet
RF Amplifier 2.0-2.4GHz .25Watt Gain 38dB

Manufacturer: Qorvo
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 11.3561 ea
Line Total: USD 11.36

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1

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TQP9224SR
Qorvo

1 : USD 11.7055
25 : USD 8.5069
100 : USD 6.9457

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
Minimum Operating Temperature
Maximum Operating Temperature
Operating Supply Current
Packaging
Test Frequency
Amplifier Type
Brand
Number Of Channels
Development Kit
Input Return Loss
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
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TQP9224 High Linearity 0.25 W Small Cell PA General Description The TQP9224 is a high-linearity three-stage power amplifier in a low-cost surface-mount package with on-chip bias control and temperature control circuits, suitable for small cell or enterprise Femto cell base station applications. The TQP9224 provides 36.7 dB high gain and 50 dBc ACLR at +24dBm linear power using a 20 MHz LTE signal 14 Pin 7x7mm Leadless SMT Package over the 2.32.4GHz frequency range covering 3GPP Bands 30, 40. Product Features The TQP9224 integrates three high performance amplifier 2.32.4GHz Frequency Range stages to allow for a compact system design and requires Fully integrated, 3-Stage Power Amplifier very few external components for operation. The amplifier Internally Matched 50 Input/Output is bias adjustable allowing the amplifiers power 50dBc ACLR at Pavg = +24dBm consumption to be optimized for specific performance 36.7dB Gain requirements. The TQP9224 is available in a lead- 14% PAE at +24dBm free/RoHS-compliant 7x7mm surface mount package. 204mA Quiescent Current On-chip Control Bias and Temp. Comp Circuit RoHS compliant Covers Band 30, 40 Functional Block Diagram Applications Small Cell/Picocell Enterprise Femtocell Customer Premises Equipment (CPE) Data Cards and Terminals Distributed Antenna Systems (DAS) Booster Amps, Repeaters Top View Ordering Information Part No. Description TQP9224TR13 2,500 pieces on a 13 reel (standard) TQP9224PCB401 2.32.4GHz Evaluation Board Data Sheet March 1, 2018 Subject to change without notice - 1 of 8 - www.qorvo.com TQP9224 High Linearity 0.25 W Small Cell PA Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temperature 55 to +150C V , V +3.6 +4.5 +5.25 V CC1 cc2 RF Input Power, CW, 50, T=+25C +9 dBm Vref +2.75 +2.85 +2.95 V Supply Voltage (VCC) 6 V TCASE 40 +85 C VREF +3.5 V Tj at TCASE max +156 C Exceeding any one or a combination of the Absolute Maximum Rating Electrical specifications are measured at specified test conditions. conditions may cause permanent damage to the device. Extended Specifications are not guaranteed over all recommended operating application of Absolute Maximum Rating conditions to the device may conditions. reduce device reliability. Electrical Specifications (1) Parameter Conditions Min Typ Max Units Frequency Range 2300 2400 MHz Test Frequency MHz 2350 Gain 34 40 dB 36.7 Input Return Loss 16 dB Output Return Loss 8 dB Output P1dB +33.6 dBm ACLR POUT = +24 dBm, 20MHz LTE E-TM1.1, 9.5 dB PAR 50 -45 dBc Power Added Efficiency POUT = +24 dBm, 20MHz LTE E-TM1.1, 9.5 dB PAR 13 14 % Spurious Output Level POUT = +24 dBm, 10:1 VSWR <60 dBc No permanent degradation or failure 10:1 - VSWR survivability Quiescent Current, I V + V 160 250 mA CQ CC1 CC2 204 Reference Current , I mA ref Temp = 40C to +85C, VREF = +2.85V 8.7 Leakage Current V = +4.5 V, V = 0 V 8 A CC REF 1.5 Operational Current, I P = +24dBm 390 430 mA CC OUT 0% Vref to 90% RF Rise time 1.7 2.5 s Switching Speed 100% Vref to 10% RF Fall time 0.87 1 s 2F0 at +24dBm, CW signal -40 -35 dBc Harmonics 3F0 at +24dBm, CW signal -54 -49 dBc 4F0 at +24dBm, CW signal -61 -56 dBc Module (junction to case) 35.4 C/W Thermal Resistance, jc Notes: 1. Test conditions unless otherwise noted: V =V = +4.5V, V = +2.85V, Temp=+25C, 50 system. CC1 cc2 REF Data Sheet March 1, 2018 Subject to change without notice - 2 of 8 - www.qorvo.com

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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