Product Information

TQP9321

TQP9321 electronic component of Qorvo

Datasheet
TriQuint (Qorvo) RF Amplifier 1.8-2.17GHz PAE 27% Gain 30 dB

Manufacturer: Qorvo
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

TQP9321
Qorvo

1 : USD 12.9992
25 : USD 9.9573
100 : USD 7.7798
250 : USD 6.4449
500 : USD 5.7884
1000 : USD 5.0771
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Type
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
OIP3 - Third Order Intercept
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Operating Supply Current
Packaging
Series
Test Frequency
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Supply Voltage - Max
Supply Voltage - Min
Taric
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TQP9321 High Efficiency 0.5W Small Cell PA General Description The TQP9321 is a high-efficiency, two-stage power amplifier with integrated bias and temperature control circuits in a low-cost surface-mount package. This 0.5 watt power amplifier is ideal for small cell base station applications. 3.5x4.5mm Leadless SMT Package TQP9321 provides high gain (30dB) and +27dBm linear power with pre-distortion correction over the 1.82.2 GHz frequency range for bands 1, 2, 3, 4, 10 and 25. With pre- distortion, the amplifier is able to achieve 50dBc ACLR at +27dBm output power using an LTE signal. Product Features The TQP9321 integrates two high performance amplifier Frequency Range: 1.82.17 GHz stages to allow for a compact system design and requires Covers Multiple Bands with One Component very few external components for operation. The amplifier is bias adjustable allowing the amplifiers power Fully Integrated, 2-Stage Power Amplifier consumption to be optimized for specific applications. The Internally Matched 50 Input/Output TQP9321 is available in a lead-free/RoHS-compliant ACLR: 50dBc ACLR at Pavg =+27dBm 3.5x4.5mm surface mount package and is pin-compatible Gain: 30dB to the 0.71.0 GHz TQP9309 and 2.52.7 GHz TQP9326. High Efficiency: 27% at +27dBm Quiescent Current: 110mA Integrated Bias Control and Temp. Comp Circuit Single Supply Voltage: +5V Lead-free / RoHS compliant POE Capable Applications Functional Block Diagram Small Cell / Picocell Enterprise Femtocell Bands 1, 2, 3, 4, 10 and 25 RFin V V N/C N/C N/C RFout PD1 PD2 13 12 11 10 9 8 7 Matching Matching AMP1 AMP2 Network Network Exposed Pin 1 Backside Pad Reference Mark GND Package Topside 1 2 3 4 5 6 Ordering Information V V N/C N/C N/C N/C BIAS CC Part No. Description TQP9321 0.5 W Small Cell PA TQP9321-PCB Evaluation board Data Sheet April 14, 2017 Subject to change without notice - 1 of 8 - www.qorvo.com TQP9321 High Efficiency 0.5W Small Cell PA Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units V +5 V Storage Temperature 40 to 150C DD T 40 25 +85 C AMB Supply Voltage (V ) +6V CC 6 Tj for >10 hours MTTF +175 C RF Input Power, CW, 50, T=25C +10dBm Electrical specifications are measured at specified test conditions. Exceeding any one or a combination of the Absolute Maximum Rating Specifications are not guaranteed over all recommended operating conditions may cause permanent damage to the device. Extended conditions. application of Absolute Maximum Rating conditions to the device may reduce device reliability. Electrical Specifications Test conditions unless otherwise noted: VCC=+5V, VPD1=VPD2=+5V, Temp.=+25C. Parameter Conditions Min Typ Max Units Operational Frequency Range 1800 2170 MHz Output Channel Power +27 dBm 18051880MHz 28.1 30 dB Gain 19301990MHz 27.1 29 dB 21102170MHz 27.1 30.8 dB 29 Gain Temperature Coefficient -0.024 dB/C ACLR Uncorrected See note 1 -35 dBc ACLR Corrected See note 1 -50 dBc 18051880MHz, See note 1 29 % Power Added Efficiency 19301990MHz, See note 1 28 % 21102170MHz, See note 1 27 % 18051880MHz +33.6 +34.7 dBm Output P3dB 19301990MHz +33.6 +34.7 dBm 21102170MHz +33.6 dBm +34.7 -0.008 dBm/C P3dB Temperature Coefficient Noise Figure 3.5 dB Quiescent Current, I 90 110 136 mA CQ Reference Current , I 2 mA PD Operational Current, ICC Pout = +27dBm 340 mA Pout = +26dBm VSWR Survivability 10:1 Signal : WCDMA 1C, PAR = 8dB Module (junction to case) 27 C/W Thermal Resistance, jc Notes: 1. Using LTE signal, 20MHz/Carrier, IBW = 18.02MHz, PAR 7.5dB, Pout = +27dBm. 2. Items in min/max columns in bold at guaranteed by production test at 2.14GHz. 3. Items in min/max columns that are not a bold font are guaranteed by design characterization. Data Sheet April 14, 2017 Subject to change without notice - 2 of 8 - www.qorvo.com

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Qorvo
Qorvo, Inc.
RF9
RFMD
RFMD (Qorvo)
TriQuint
TriQuint (Qorvo)
TRIQUINT SEMI
TriQuint Semiconductor
TriQuint Semiconductor, Inc

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