TAT7430B CATV 75 pHEMT High Gain RF Amplifier Applications Single-ended and Push-pull Optical Receivers Low-noise Drop Amplifiers Distribution Amplifiers Multi-Dwelling Units SOT-89 package Single-ended Gain Block Product Features Functional Block Diagram High typical gain of 22 dB in application circuit On-chip active bias for consistent bias current and repeatable performance 50 1200 MHz bandwidth Low noise: typical NF < 2.2 dB to 1000MHz Flexible 5 V to 8 V biasing I (8V) = 190 mA typical in application circuit RF IN GND RFOUT DD +41 dBm typical OIP3 +65 dBm typical OIP2 +22 dBm typical P1dB Low distortion: CSO -61 dBc, CTB -81 dBc (10 dBmV/ch at input, 80 ch NTSC flat) pHEMT device technology SOT-89 package General Description Pin Configuration The TAT7430B is a low cost RF amplifier designed for Pin Symbol applications from DC to 1200 MHz. The balance of low 1RF IN noise and distortion provides an ideal solution for a wide 2 GND range of broadband amplifiers used in cable television 3RF OUT applications. 4 GND PADDLE It is particularly well suited for new home networks requiring higher gain for a large number of splits. In addition, the TAT7430Bs combination of high gain, low noise, and good return loss make it an excellent choice for optical receiver applications and low noise front ends. An internal bias circuit mitigates the effect of temperature and process variation. The bias current can be adjusted with an external resistor. It is able to work in low noise applications from a 5 V supply. Ordering Information The TAT7430B is fabricated using 6-inch GaAs pHEMT technology to optimize performance and cost. It provides Part No. Description excellent gain and return loss consistency inherent to the 75 High linearity pHEMT amplifier TAT7430B pHEMT process. (lead-free/RoHS compliant SOT-89 Pkg) TAT7430B-EB Amplifier evaluation board Standard T/R size = 1000 pieces on a 7 reel. Data Sheet: Rev C 10/09/17 - 1 of 7 - Disclaimer: Subject to change without notice 2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network TAT7430B CATV 75 pHEMT High Gain RF Amplifier Specifications 1 Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units o Storage Temperature -65 to +150 C V 5 8 V cc Device Voltage +10 V I 190 mA cc o 6 Single tone max input level +55dBmV T (for >10 hours MTTF) 150 C J (50-1002 MHz) 1. Operation of this device outside the parameter ranges given above may cause permanent damage. Electrical Specifications Test conditions unless otherwise noted: 25C case temp, +8V Vsupply, DC to 1200 MHz Parameter Conditions Min Typical Max Units Operational Frequency Range 50 1002 MHz Gain 22 dB Gain Flatness +/- 0.5 dB Noise Figure at 1 GHz 2.0 dB Input Return Loss -22 dB Output Return Loss -18 dB P1dB +22 dBm Output IP3 See Note 1. +41 dBm Output IP2 See Note 1. +65 dBm CSO See Note 2. -61 dBc CTB See Note 2. -81 dBc 190 mA Idd o Thermal Resistance (jnc. to case) 32 C/W jc Notes: 1. At -21 dBm/tone at input. 2. 10 dBmV/ch at input, 80 ch flat NTSC 3. Electrical specifications are measured at specified test conditions. 4. Specifications are not guaranteed over all recommended operating conditions. Data Sheet: Rev C 10/09/17 - 2 of 7 - Disclaimer: Subject to change without notice 2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network