DocumentNumber:MMRF2004NB FreescaleSemiconductor Rev. 0, 12/2013 Technical Data RFLDMOSWidebandIntegrated PowerAmplifier MMRF2004NBR1 The MMRF2004NB wideband integrated circuit is designed with on--chip matching that makes it usablefrom 2300to 2700MHz. This multi--stage structure is rated for 26 to 32 V operation and covers all typical cellular base 2500--2700MHz,4WAVG.,28V station modulation formats. WiMAX Typical WiMAX Performance: V =28Vdc,I =77mA,I = 275 mA, DD DQ1 DQ2 RFLDMOSWIDEBAND 3 P = 4W Avg., f = 2700MHz, OFDM 802.16d, 64QAM / , out 4 INTEGRATEDPOWERAMPLIFIER 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB 0.01% Probability onCCDF. Power Gain 28.5 dB Power Added Efficiency 17% DeviceOutput Signal PAR 9dB 0.01%Probability onCCDF ACPR 8.5MHz Offset --50dBc in1MHz Channel Bandwidth DriverApplications Typical WiMAX Performance: V =28Vdc,I =77mA,I = 275 mA, DD DQ1 DQ2 3 P = 26dBm Avg., f = 2700MHz, OFDM 802.16d, 64QAM / , out 4 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB 0.01% TO--272WB--16 Probability onCCDF. PLASTIC Power Gain 27.8 dB Power Added Efficiency 3.2% DeviceOutput Signal PAR 9dB 0.01%Probability onCCDF ACPR 8.5MHz Offset --56dBc in1MHz Channel Bandwidth Capable of Handling 10:1 VSWR, 32 Vdc, 2600 MHz, 40 W CW Output Power (3dB Input Overdrivefrom RatedP ) out Stableintoa5:1VSWR. All Spurs Below --60dBc 100mW to5W CW P out Typical P 1dB CompressionPoint 25 W CW out Features 100% PAR Tested for Guaranteed Output Power Capability CharacterizedwithSeries Equivalent Large--Signal Impedance Parameters andCommonSourceS--Parameters On--ChipMatching(50Ohm Input, DC Blocked) IntegratedQuiescent Current TemperatureCompensationwith (1) Enable/Disable Function IntegratedESD Protection 225C Capable Plastic Package In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel. GND 1 16 GND V 2 DS1 15 NC NC 3 NC 4 NC 5 V DS1 RF 6 14 RF /V in out DS2 7 NC RF RF /V in out DS2 V 8 GS1 V 9 GS2 10 13 NC V DS1 12 V GND 11 GND GS1 QuiescentCurrent (1) V TemperatureCompensation GS2 (Top View) V DS1 Note: Exposed backside of the package is thesourceterminalforthetransistors. Figure1.FunctionalBlockDiagram Figure2.PinConnections 1. Referto AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Controlforthe RFIntegrated Circuit DeviceFamily.GotoTable1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V --0.5, +65 Vdc DS Gate--Source Voltage V --0.5, +10 Vdc GS Operating Voltage V 32, +0 Vdc DD Storage Temperature Range T --65 to +150 C stg Case Operating Temperature T 150 C C (1) Operating Junction Temperature T 225 C J Input Power P 22 dBm in Table2.ThermalCharacteristics (2) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R C/W JC WiMAX Application Stage 1, 28 Vdc, I =77mA 5.9 DQ1 (Case Temperature 75 C, P =4W Avg.) Stage2, 28Vdc, I =275 mA 1.4 out DQ2 CW Application Stage 1, 28 Vdc, I =77mA 5.5 DQ1 (Case Temperature 81 C, P =25W CW) Stage2, 28Vdc, I =275 mA 1.3 out DQ2 Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 1B Machine Model(perEIA/JESD22--A115) A Charge Device Model(perJESD22--C101) II Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113, IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25 Cunless otherwise noted) A Characteristic Symbol Min Typ Max Unit Stage1 -- OffCharacteristics Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 1 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--Source Leakage Current I 1 Adc GSS (V =1.5Vdc,V =0Vdc) GS DS Stage1 -- OnCharacteristics Gate Threshold Voltage V 1.2 1.9 2.7 Vdc GS(th) (V =10Vdc,I =20 Adc) DS D Gate Quiescent Voltage V 2.7 Vdc GS(Q) (V =28Vdc,I =77mA) DS DQ1 Fixture Gate Quiescent Voltage V 12.5 15.8 19.5 Vdc GG(Q) (V =28Vdc,I =77 mAdc, Measured in FunctionalTest) DD DQ1 1. Continuous use at maximum temperature willaffect MTTF. 2. Referto AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to