SPF5122Z 50MHz to 4000MHz, GaAs pHEMT Low Noise MMIC Ampli- SPF5122Z fier 50MHz to 4000MHz, GaAs pHEMT LOW NOISE MMIC AMPLIFIER Product Description Features The SPF5122Z is a high performance pHEMT MMIC LNA designed for Ultra-Low Noise Figure=0.60dB at 900MHz operation from 50MHz to 4000MHz. The on-chip active bias network pro- vides stable current over temperature and process threshold voltage vari- Gain=18.9dB at 900MHz ations. The SPF5122Z offers ultra-low noise figure and high linearity High Linearity: OIP3=40.5dBm performance in a gain block configuration. Its single-supply operation and at 1900MHz integrated matching networks make implementation remarkably simple. A high maximum input power specification make it ideal for high dynamic Channel Power=13.4dBm (- 65dBc IS95 ACPR, 880MHz) range receivers. Optimum Technology Gain and NF versus Frequency P =23.4dBm at 1900MHz 1dB Matching Applied Broadband Application Circuit (5V, 90mA) 25.0 4.00 GaAs HBT Single-Supply Operation: 5V at I =90mA GaAs MESFET DQ 22.0 3.50 InGaP HBT Flexible Biasing Options: 3-5V, 19.0 3.00 SiGe BiCMOS Adjustable Current 16.0 2.50 Si BiCMOS Broadband Internal Matching SiGe HBT 13.0 2.00 GaAs pHEMT 10.0 1.50 Applications Si CMOS 7.0 1.00 Si BJT Cellular, PCS, W-CDMA, ISM, 4.0 Gain 0.50 WiMAX Receivers GaN HEMT NF InP HBT 1.0 0.00 PA Driver Amplifier 0.0 0.5 1.0 1.5 2.0 2.5 3.0 RF MEMS Frequency (GHz) Low Noise, High Linearity Gain LDMOS Block Applications Specification Parameter Unit Condition Min. Typ. Max. Small Signal Power Gain 17.2 18.9 20.2 dB 0.9GHz 11.2 12.2 14.4 dB 1.96GHz Output Power at 1dB Compression 20.8 22.8 dBm 0.9GHz 21.423.4 dBm1.9GHz Output Third Order Intercept Point 35.1 38.1 dBm 0.9GHz 37.2 40.5 dBm 1.9GHz Noise Figure 0.59 0.85 dB 0.9GHz 0.65 0.9 dB 1.9GHz Input Return Loss 10 14.3 dB 0.9 GHz 21 dB 1.9GHz Output Return Loss 14 17 dB 0.9GHz 13 dB 1.9GHz Reverse Isolation 24.1 dB 0.9GHz 18.4 dB 1.9GHz Device Operating Voltage 5.00 5.25 V Device Operating Current 75 90 105 mA Quiescent Thermal Resistance 65 C/W Junction to lead Test Conditions: V =5V, I =90mA, OIP Tone Spacing=1MHz, P per tone=0dBm, Z =Z =50 , 25C, Broadband Application Circuit D DQ 3 OUT S L RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical DS110408 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. 1 of 12 Gain (dB) NF (dB)SPF5122Z Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit Exceeding any one or a combination of the Absolute Maximum Rating conditions may Max Device Current (l ) 120 mA cause permanent damage to the device. Extended application of Absolute Maximum D Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- Max Device Voltage (V)5.5 V D tions is not implied. Max RF Input Power 27 dBm The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any Max Dissipated Power 660 mW infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of Max Junction Temperature (T ) 150 C RFMD. RFMD reserves the right to change component circuitry, recommended appli- J cation circuitry and specifications at any time without prior notice. Operating Temperature Range (T ) -40 to + 85 C L RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric Max Storage Temperature -65 to +150 C materials and red phosphorus as a flame retardant, and <2% antimony in solder. ESD Rating - Human Body Model Class 1B (HBM) Moisture Sensitivity Level (MSL) MSL 1 Operation of this device beyond any one of these limits may cause permanent dam- age. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: I V <(T -T )/R , j-l and T =T D D J L TH L LEAD Typical RF Performance - Broadband Application Circuit with V =5V, I =90mA D D Parameter Unit 0.1 0.4 0.9 1.5 1.9 2.2 2.5 3.5 3.8 GHz* GHz GHz GHz GHz GHz GHz GHz GHz Small Signal Gain dB 27.0 24.0 19.0 15.0 13.0 12.0 11.0 6.0 7.0 Noise Figure dB 0.42 0.47 0.59 0.70 0.64 0.73 0.86 1.35 1.27 Output IP3 dBm 33.0 36.0 38.0 39.5 40.5 41.0 41.5 40.5 41.5 Output P1dB dBm 22.3 22.7 23.0 23.2 23.4 23.7 23.9 22.2 22.9 Input Return Loss dB -9.5 -10.0 -14.5 -20.0 -21.0 -22.0 -22.5 -15.0 -11.5 Output Return Loss dB -29.0 -19.5 -17.0 -14.0 -13.0 -12.5 -12.5 -7.5 -15.5 Reverse Isolation dB -32.0 -29.0 -24.0 -20.0 -18.5 -17.5 -16.5 -15.5 -13.5 Test Conditions: V =5V, I =90mA, OIP Tone Spacing=1MHz, P per tone=0dBm, T =25C, Z =Z =50 *Bias Tee Data 100MHz D DQ 3 OUT L S L 1. Input RL can be improved in the 800MHz to 1000MHz band by adding a series inductor between the DC block and device input. Typical RF Performance - Broadband Application Circuit with V =3V, I =58mA D D Parameter Unit 0.1 0.4 0.9 1.5 1.9 2.2 2.5 3.5 3.8 GHz* GHz GHz GHz GHz GHz GHz GHz GHz Small Signal Gain dB 26.0 23.0 18.5 14.5 12.5 11.5 10.5 6.0 6.5 Noise Figure dB 0.35 0.44 0.58 0.65 0.61 0.69 0.79 1.25 1.19 Output IP3 dBm 31.5 33.0 34.5 36.0 36.5 37.0 37.5 37.0 37.5 Output P1dB dBm 18.8 18.9 19.1 19.4 19.9 20.2 20.1 18.9 19.2 Input Return Loss dB -8.0 -9.0 -13.0 -16.5 -18.5 -19.0 -19.0 -13.5 -10.0 Output Return Loss dB -26.0 -28.5 -23.5 -18.0 -16.5 -16.0 -15.5 -9.0 -14.0 Reverse Isolation dB -31.0 -28.0 -23.0 -19.0 -17.5 -16.0 -15.0 -14.5 -12.5 Test Conditions: V =3V, I =58mA, OIP Tone Spacing=1MHz, P per tone=0dBm, T =25C, Z =Z =50 , *Bias Tee Data 100MHz D DQ 3 OUT L S L 1. Input RL can be improved in the 800MHz to 1000MHz band by adding a series inductor between the DC block and device input. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 12 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. DS110408