DocumentNumber:MMG3006NT1 NXPSemiconductors Rev. 6, 12/2017 TechnicalData HeterojunctionBipolarTransistor Technology(InGaPHBT) MMG3006NT1 BroadbandHighLinearity Amplifier The MMG3006NT1 is a general purposeamplifier that is internally input prematchedanddesignedforabroadrangeofClassA,small--signal,high linearity, general purpose applications. It is suitable for applications with 400--2400MHz,17.5dB frequenciesfrom400to2400MHzsuchascellular,PCS,WLL,PHS, 33dBm VHF, UHF, UMTS andgeneralsmall--signalRF. InGaPHBTGPA Features Frequency: 400--2400MHz P1dB: 33dBm 900MHz Small--signalgain: 17.5dB 900MHz Thirdorder output intercept point: 49dBm 900MHz Single5V supply QFN4 4--16L Internally input prematchedto50ohms (1) Table1.TypicalPerformance Table2.MaximumRatings 900 1960 2140 Rating Symbol Value Unit Characteristic Symbol MHz MHz MHz Unit Supply Voltage V 6 V DC Small--SignalGain G 17.5 14 14 dB p Supply Current I 1400 mA DC (S21) RFInputPower P 28 dBm in InputReturnLoss IRL --8 --9 --12 dB StorageTemperatureRange T --65to+150 C (S11) stg JunctionTemperature T 175 C OutputReturnLoss ORL --13 --14 --18 dB J (S22) PowerOutput 1dB P1db 33 33 33 dBm Compression ThirdOrderOutput OIP3 49 49 49 dBm InterceptPoint 1. V =5Vdc,T =25 C,50ohmsystem,applicationcircuit DC A tunedforspecifiedfrequency. Table3.ThermalCharacteristics (2) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R 7.8 C/W JC CaseTemperature89C,5Vdc,850mA,noRFapplied 2. RefertoAN1955,Thermal Measurement Methodology of RF Power Amplifiers. GotoTable4.ElectricalCharacteristics (V =5Vdc,900MHz,T =25 C,50ohmsystem,inNXP ApplicationCircuit) DC A Characteristic Symbol Min Typ Max Unit Small--SignalGain(S21) G 16.5 17.5 dB p InputReturnLoss (S11) IRL --8 dB OutputReturnLoss (S22) ORL --13 dB PowerOutput 1dB Compression P1dB 33 dBm ThirdOrderOutputInterceptPoint OIP3 49 dBm NoiseFigure NF 6.6 dB Supply Current I 760 850 960 mA DC Supply Voltage V 5 V DC Table5.FunctionalPinDescription Pin V N.C.N.C. N.C. CC Name Number Description 16 15 14 13 V 1 Bias voltagesupply. BA V 1 12 RF /V out CC BA RF 2,3,4 RFinputforthepoweramplifier.This pinis DC--coupledand in RF 2 11 RF /V requires aDC--blockingseries capacitor. in out CC 3 10 RF /V RF out CC RF / 9,10, RFoutputforthepoweramplifier.This pinis DC--coupled in out V 11, 12 andrequires aDC--blockingseries capacitor. 4 9 RF /V CC RF out CC in V 16 Collectorvoltagesupply. 5 6 7 8 CC N.C.N.C.N.C. N.C. GND Backside ThecentermetalbaseoftheQFNpackageprovides both Center DCandRFgroundas wellas heatsink contactforthe (TopView) Metal poweramplifier. Figure1.PinConnections Table6.ESD ProtectionCharacteristics TestConditions/TestMethodology Class HumanBody Model(perJESD22--A114) 1C MachineModel(perEIA/JESD22--A115) A ChargeDeviceModel(perJESD22--C101) IV Table7.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 1 260 C Table8.OrderingInformation Device TapeandReelInformation Package MMG3006NT1 T1Suffix =1,000Units,12mm TapeWidth,13--inchReel QFN4 4--16L MMG3006NT1 RF DeviceData NXP Semiconductors 2