RFSA2013 Voltage Con- trolled Attenu- ator RFSA2013 VOLTAGE CONTROLLED ATTENUATOR Package Style: QFN, 16-Pin, 0.9mm x 3mm x 3mm 16 15 14 13 Features GND 1 12 GND Patented Circuit Architecture CONTROL Broadband 50MHz to 6000MHz BLOCK NC 2 11 NC Frequency Range 30dB Attenuation Range RFIN 3 10 RFOUT +50dBm IIP3 Typical ATTEN +80dBm IIP2 Typical NC 4 9 NC High 1dB Compression Point >+30dBm 5 6 7 8 Low Supply Current 1mA Typical 5V Power Supply Functional Block Diagram Linear in dB Control Characteristic Product Description Internal Temperature RFMD s RFSA2013 is a fully monolithic analog voltage controlled attenuator (VCA) featuring Compensation exceptional linearity over a typical temperature compensated 30dB gain control range. It incor- porates a revolutionary new circuit architecture to solve a long standing industry problem: high Class 1C ESD (1000V) IP3, high attenuation range, low DC current, broad bandwidth and temperature compensated 3.3V Version Available linear in dB control voltage characteristic. This voltage controlled attenuator is controlled by a single positive control voltage with on chip DC conditioning circuitry. The slope of the control (RFSA2023) voltage versus gain is selectable. The RFSA2013 draws a very low 1mA current and is packaged Complete Solution in a Small in a small 3mm x 3mm QFN. This attenuator is matched to 50 over its rated control range and 3mm x 3mm, QFN Package frequency with no external matching components required. Typical VCA s in this performance category have poor inherent attenuation versus temperature and poor nonlinear attenuation versus control voltage characteristics. To correct these shortcomings, other VCA s require exten- sive off chip analog support circuitry that consume valuable PCB area and additional DC power. Applications This game changing product incorporates the complete solution in a small 3mm x 3mm QFN package that reduces the footprint by 20X in area and reduces the DC power by 10X over con- Cellular, 3G Infrastructure ventional PIN diode approaches. WiBro, WiMax, LTE Microwave Radio Ordering Information High Linearity Power Control RFSA2013SR 7 Sample reel with 100 pieces RFSA2013SQ Sample bag with 25 pieces RFSA2013TR7 7 Reel with 2500 pieces RFSA2013PCK-410 50MHz to 6000MHz PCBA with 5-piece sample bag Optimum Technology Matching Applied GaAs HBT SiGe BiCMOS GaAs pHEMT GaN HEMT GaAs MESFET Si BiCMOS Si CMOS BiFET HBT InGaP HBT SiGe HBT Si BJT RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2012, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical DS1 50622 support, contact RFMD at (+1) 336-678-5570 or customerservice rfmd.com. 1 of 17 GND MODE GND VDD GND VC GND GNDRFSA2013 Absolute Maximum Ratings Parameter Rating Unit Caution ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may Supply Voltage (V ) -0.5 to +6 V DD cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- Control Voltage (V ) -0.5 to +6 V C tions is not implied. Mode Pin Voltage (MODE) -0.5 to +6 V The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any RF Input Power +30 dBm infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of Storage Temperature RFMD. RFMD reserves the right to change component circuitry, recommended appli- -65 to +150 C cation circuitry and specifications at any time without prior notice. Junction Temperature +125 C RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free ESD Rating Human Body Model (HBM) 1000 V per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. Specification Parameter Unit Condition Min. Typ. Max. General Supply Voltage 4.75 5 5.25 V Supply Current 1 mA Operating Temperature (RF Input Power -40 +105 C Handling Derates Above 85C) Thermal Resistance 45 C/W RF input must be RFIN pin RF Input Power at 85C 27 dBm RF input must be RFIN pin RF Performance Frequency Range 50 6000 MHz Minimum Insertion Loss 2.6 3.5 dB Gain Control Range 30 33.2 dB DC to 4GHz Peak to peak gain variation over temperature Gain versus Temperature 1.7 dB for fixed control voltage Return Loss 15 dB Insertion phase at 15dB attenuation relative to Relative Phase 16.2 Deg minimum insertion loss Input 1dB Compression Point 30 dBm Input IP3 45 50 dBm PIN + (IM3 /2) dBC Input IP2 80 dBm PIN + IM2 , IM2 is F1+F2 dBC Input IH2 85 dBm PIN + H2 , H2 is second harmonic dBC Input IH3 55 dBm PIN + (H3 /2), H3 is third harmonic dBC Control Voltage Control Range, Positive Attenuation 0.5 4.5 V 4.5V control voltage is lowest insertion loss, Slope MODE pin high Voltage Control Range, Negative 0V control voltage is lowest insertion loss, V 0 3.3 Attenuation Slope MODE pin low Voltage Control Pin Current (MODE High) 37 A VC Pin at 5V Voltage Control Pin Current (MODE Low) 24 A VC Pin at 3.3V MODE Pin Logic Low 0.4 V MODE Pin Logic High 1 V Settling Time 15 sec 1dB attenuation change settling within 0.1dB Note: Typical performance at nominal conditions unless otherwise noted: Supply voltage = 5.0V, Operating temperature = 25C, RF Frequency 2GHz 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 17 support, contact RFMD at (+1) 336-678-5570 or customerservice rfmd.com. 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