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RFFM6404TR13

RFFM6404TR13 electronic component of Qorvo

Datasheet
RF Front End 430-450MHz FEM ISM Band

Manufacturer: Qorvo
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MOQ : 1
Multiples : 1
1 : USD 7.8522
25 : USD 5.5818
100 : USD 4.7856
250 : USD 4.1071
500 : USD 3.5861
1000 : USD 3.0289
2500 : USD 2.4473
5000 : USD 1.9869
10000 : USD 1.9264
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RoHS - XON
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NF - Noise Figure
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Gain
Development Kit
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RFMD + TriQuint = Qorvo RFFM6404 RFFM6404 2.5V to 4.5V, ISM Band, 27.5dBm, 430MHz to 450MHz Transmit/Receive Module Package: LGA, 28-pin, 6.0mm x 6.0mm x 0.975mm The RFFM6404 is a single-chip front end module (FEM) for applications Features in the 430MHz and 450MHz ISM Bands. The RFFM6404 addresses the Integrated 50 Input/Output Match need for aggressive size reduction for typical portable equipment RF front-end design and greatly reduces the number of components outside Tx Output Power: 27.5dBm of the core chipset thus minimizing the footprint and assembly cost of Separate Tx/Rx 50 transceiver interface the overall solution. The RFFM6404 contains an integrated 27.5dBm PA, SP2T Antenna switch, integrated Tx harmonic filter, LNA with Integrated PA, filtering LNA with Bypass Mode bypass mode, and matching components. The RFFM6404 is packaged in a 28-pin, 6.0mm x 6.0mm x 0.975mm over-molded laminate package Applications with backside ground which greatly minimizes next level board space 400MHz ISM Bands and allows for simplified integration. Single Chip RF Front End Module Wireless Automatic Metering Portable Battery Powered Equipment Smart Energy Functional Block Diagram Ordering Information RFFM6404SB Standard 5-piece bag RFFM6404SQ Standard 25-piece bag RFFM6404SR Standard 100-piece reel RFFM6404TR13 Standard 2500-piece reel RFFM6404PCK-410 Fully Assembled Evaluation Board w/ 5-piece bag Revision DS20151103 1 of 8 Disclaimer: Subject to change without notice 2015 RF Micro Devices, Inc. www.rfmd.com / www.qorvo.com RFFM6404 RFMD + TriQuint = Qorvo Caution ESD sensitive device. Absolute Maximum Ratings Parameter Rating Unit Voltage 5.25 V RoHS status based on EU Directive Storage Temperature Range -40 to +150 C 2011/65/EU (at time of this document revision), halogen free per IEC 61249-2- Operating Temperature Range -40 to +85 C 21, < 1000ppm each of antimony trioxide Receive RF Input Power (SAW2) +25 dBm in polymeric materials and red phosphorus as a flame retardant, and Transmit RF Input Power (PA Enabled) +15 dBm <2% antimony in solder. Receive RF Input Power (ANT) +33 dBm Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent T/R Port Load VSWR in Transmit Mode 10:1 damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce ESD, HBM 500 V device reliability. Specified typical performance or ESD, CDM 1000 V functional operation of the device under Absolute Maximum Rating conditions is not implied. Moisture Sensitivity Level MSL3 Nominal Operating Parameters Specification arameter Unit Condition Min Typ Max Frequency 430 450 MHz RF Port Impedance 50 Operating Voltage 2.5 4.2 4.5 V V TX & V RX CC CC V operates such that the transmitter output power is saturated at a level APC V (Tx Output Power Control) 0.0 2.7 3.0 V lower than 1.9V and minimal variation in output power of the device occurs APC above that level RF:Off, V TX=4.2V, V RX=4.2V, CC CC Leakage Current VAPC=0.0V, EN=0.0V, TR=0.0V, BYP=0.0V, Temperature=25C Total FEM Leakage Current 0.1 1.0 A I TX + I RX CC CC Measured Path: TX to ANT, VCCTX=4.2V, VCCRX=4.2V, Transmit High Power Mode VAPC=2.7V, EN=1.8V, TR=1.8V, BYP=0.2V, Temperature=25C 25.5 26.5 dB V TX=4.2V, P =+3dBm CC IN Gain 21.5 22.5 dB V TX=2.7V, P =+3dBm CC IN 29.5 dBm V TX=4.2V, P =+3dBm CC IN Output Power 27.5 dBm V TX=3.6V, P =+3dBm CC IN 24.5 25.5 dBm V TX=2.7V, P =+3dBm CC IN Output Power Variation -0.4 -0.4 dB V TX=4.2V, P =+3dBm, Over frequency and control voltage CC IN Output P3dB 29 dBm VCCTX=4.2V 350 mA V TX=4.2V, P =27.5dBm, I TX CC OUT CC Operating Current 450 600 mA V TX=4.2V, P =+3dBm, I TX CC IN CC Quiescent Current 100 mA ICCTX, RF = Off -30 dBc P =27.5dBm OUT Second Harmonic -50 dBc P =27.5dBm, with harmonic filter OUT -40 dBc P =27.5dBm OUT Third Fourth Harmonic -60 dBc P =27.5dBm, with harmonic filter OUT P =27.5dBm -60 dBc OUT Fifth Tenth Harmonic -60 dBc P =27.5dBm, with harmonic filter OUT Module PAE 45 % V TX=4.2V, P =29.5dBm (takes into account filter and switches) CC OUT Revision DS20141110 2 of 8 Disclaimer: Subject to change without notice 2015 RF Micro Devices, Inc. www.rfmd.com / www.qorvo.com

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Qorvo
Qorvo, Inc.
RF9
RFMD
RFMD (Qorvo)
TriQuint
TriQuint (Qorvo)
TRIQUINT SEMI
TriQuint Semiconductor
TriQuint Semiconductor, Inc

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