Product Information

RF3025TR7

RF3025TR7 electronic component of Qorvo

Datasheet
RF Switch ICs 0.01 to 6 GHz A 772-RFSW6024TR13

Manufacturer: Qorvo
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

RF3025TR7
Qorvo

1 : USD 5.2015
25 : USD 1.6619
100 : USD 1.4082
250 : USD 1.2509
500 : USD 1.1672
1000 : USD 1.072
2500 : USD 1.0149
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Number of Switches
Switch Configuration
Insertion Loss
Off Isolation - Typ
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Operating Frequency
Minimum Operating Temperature
Technology
Packaging
Brand
Off Time - Max
On Time - Max
Development Kit
High Control Voltage
Operating Supply Current
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Supply Voltage - Max
Supply Voltage - Min
Taric
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RF3025SPDT, High Isolation, Single Control, Absorptive Switch RF3025 SPDT, HIGH ISOLATION, SINGLE CONTROL, ABSORPTIVE SWITCH Package: QFN, 16-Pin, 3mm x 3mm Product Description Features The RF3025 is a high isolation single-pole double-throw (SPDT) absorptive 10MHz to 6GHz Operation switch designed for general purpose switching applications requirinng 0.5dB Insertion Loss at 1 GHz moderate insertion loss and power handling capability. It features single- 1.1dB Insertion Loss at 6 GHz bit control with operation as low as 3V. This GaAs pHEMT switch is housed in a compact 3mm, 16-pin, leadless QFN package. Terminated Off State 58dB Isolation at 1GHz 39dBm Isolation at 6GHz Optimum Technology Matching Applied 3V Minimum Voltage GaAs HBT 50dBm IP3 at 5V GaAs MESFET InGaP HBT Applications SiGe BiCMOS Si BiCMOS Cellular Handset Applications SiGe HBT Antenna Tuning Applications GaAs pHEMT IEEE802.11b/g WLAN Si CMOS Applications Si BJT GaN HEMT Cellular Infrastructure Applications InP HBT RF MEMS LDMOS Specification Parameter Unit Condition Min. Typ. Max. Insertion Loss 0.45 dB Freq = 10MHz to 1.0GHz 0.5 0.8 dB Freq = 1.0GHz to 2.0GHz 0.55 dB Freq = 2.0GHz to 3.0GHz 0.8 dB Freq = 3.0GHz to 5.0GHz 1.1 dB Freq = 5.0GHz to 6.0GHz Return Loss 18 dB Freq = 10MHz to 1.0GHz, Freq = 1.0GHz to 3.0GHz 13 dB Freq = 3.0GHz to 6.0GHz Return Loss into Off Port 14 dB Freq = 0.5GHz to 0.8GHz 16 dB Freq = 0.8GHz to 1.0GHz 17 dB Freq = 1.0GHz to 3.0GHz 12 dB Freq = 3.0GHz to 6.0GHz Isolation 58 dB Freq = 0.5GHz to 1.0GHz 50 52 dB Freq = 1.0GHz to 2.0GHz 48 dB Freq = 2.0GHz to 3.0GHz 42 dB Freq = 3.0GHz to 5.0GHz 39 dB Freq = 5.0GHz to 6.0GHz P0.1dB* 30 dBm Freq = 1.8GHz IP3* 50 dBm Freq = 0.5GHz to 2.5GHz, 1MHz spacing, 10dBm/tone I , Supply Current 200 300 uA DD I , Control Current 20 uA C TON, TOFF 120 nS 50% of VCTRL to 10/90% of RF TRISE, TFALL 35 nS 10/90% RF Test Conditions: V = 5V, 25C, 50 , with application circuit with 100pF DC blocking capacitors. DD *Note: Performance degrades below 50MHz. RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2012, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical DS140910 support, contact RFMD at (+1) 336-678-5570 or customerservice rfmd.com. 1 of 6RF3025 Absolute Maximum Ratings Parameter Rating Unit Caution ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may Supply Voltage V 5.5 V cause permanent damage to the device. Extended application of Absolute Maximum DD Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- Control Voltage (V ) 5.5 V C tions is not implied. RF Input Power (on state) 32 dBm The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any RF Input Power (terminated port) 24 dBm infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of Operating Temp Range (T ) -40 to +85 C RFMD. RFMD reserves the right to change component circuitry, recommended appli- L cation circuitry and specifications at any time without prior notice. Storage Temp -65 to +150 C RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free ESD Rating (HBM) Class 0 per IEC 61249-2-21, < 1000 ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in Moisture Sensitivity Level MSL2 solder. Truth Table V RFC-RF1 RFC-RF2 C 0 OFF ON 1 ON OFF Logic 0: 0V < V < 1.0V C Logic 1: 2V < V < 5V C Evaluation Board Layout All Capacitors are 100pF 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 6 support, contact RFMD at (+1) 336-678-5570 or customerservice rfmd.com. DS140910

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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