Product Information

RF3858SR

RF3858SR electronic component of Qorvo

Datasheet
RF Front End 902-928MHz NF 1.3dB Hi Gain 21dB

Manufacturer: Qorvo
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 100
Multiples : 100

Stock Image

RF3858SR
Qorvo

100 : USD 7.5348
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Type
Operating Frequency
Operating Supply Voltage
Maximum Operating Temperature
Maximum Data Rate
Mounting Style
Package / Case
NF - Noise Figure
Operating Supply Current
Packaging
Technology
Brand
Gain
Minimum Operating Temperature
Product Type
Factory Pack Quantity :
Subcategory
Hts Code
Taric
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RF3858 3.0 V TO 4.2V, ISM BAND TRANSMIT/RECEIVE MODULE WITH DIVERSITY TRANSFER SWITCH Package: LGA, 32-pin, 8mm x 8mm x 1.2mm Features Integrated LNA, PA and Transfer Switch Small From Factor 8.0mm x 8.0mm x 1.2mm 50 Inputs and Outputs Low Insertion Loss, High Isolation Transfer Switch 31.5dBm PA Output Power Low PA Harmonic Content Applications 868MHz/900MHz ISM Band Application Single Chip RF Front End Module Portable Battery Powered Equipment Wireless Automatic Metering Applications Functional Block Diagram Product Description The RF3858 is a single-chip front-end module (FEM) for applications in the 868MHz/900MHz Band. The RF3858 addresses the need for aggressive size reduction for typical portable equipment RF front-end design and greatly reduces the number of components outside of the core chipset thus minimizing the footprint and assembly cost of the overall solution. The RF 3858 contains an integrated 1 Watt PA, TX/RX transfer switch, LNA with bypass mode, and matching components. The RF3858 is packaged in a 32-pin, 8.0mm x 8.0mm x 1.2mm over molded laminated package with backside ground which greatly minimizes next level board space and allow for simplified integration . Optimum Technology Matching Applied GaAs HBT SiGe BiCMOS GaAs pHEMT GaN HEM GaAs MESFET Si BiCMOS Si CMOS RF MEMS InGaP HBT SiGe HBT Si BJT LDMOS TM TM TM TM RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity , PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2009, RF Micro Devices, Inc. DS130424 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 1 of 11 Support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com RF3858 3.0 V TO 4.2V, ISM BAND TRANSMIT/RECEIVE MODULE WITH DIVERSITY TRANSFER SWITCH Absolute Maximum Ratings Parameter Rating Unit Overall DC Supply Voltage +5.0 V Operating Ambient Temperature -40 to +85 C Storage Temperature -40 to +150 C Low Noise Amplifier DC Supply Current 32 mA Input RF Power 5 dBm Power Amplifier DC Supply Current 1200 mA Input RF Power 10 dBm Transmit/Receive Switch Input RF Power 33 dBm Specification Parameter Unit Condition Min. Typ. Max. Low Noise Amplifier Frequency Range 868 902 to 928 MHz High Gain Mode Gain 17 21 23.5 dB Over LNA VCC, LNA VREF, Temperature, and Frequency Noise Figure 1.3 1.5 dB LNA V = LNA V = 3.3V REF CC Input IP3 -4.5 -1 dBm TAMB= +25C, LNA VCC= 3.3V Input Gain Compression -15 dBm Input Return Loss -8 -5 dB Output Return Loss -8 -6 dB LNA Operating Current 15 mA LNA VREF= LNA VCC= 3.3V LNA Enable 1 mA Stability, Input VSWR 10:1 All phase angles Output Spurious -70 dBc Low Gain Mode Gain Select>1.8V Gain -7 -6 dB Input IP3 15.5 17 dBm TAMB= +25C, LNA VCC= 3.3V Current Drain 1.5 3 mA Power Amplifier Frequency Range 868 902 to 928 MHz PA VCC1= PA VCC2= PA BIAS 3.0 4.0 V PA V 2.75 2.85 2.95 V REG POUT 31.5 dBm Saturated power output Gain 27 30 dB PA V = PA V = PA BIAS= 4V, CC1 CC2 over temperature and frequency Output Harmonic Levels nd 2 -40 dBc rd th 3 through 10 -70 dBc PA VCC1= PA VCC2= PA BIAS= 4V, over temperature and frequency Efficiency 40 % 31.5dBm output, PA V = PA V = PA BIAS, 2.85V CC1 CC2 VREG Input Return Loss 9 dB Output Spurious -70 dBc Stability 10:1 All phase angles 7:1 All phase angles, -40C Current Operating 0.7 1.0 A 31.5dBm output, PA V = PA V = PA BIAS, 2.85V CC1 CC2 VREG Bias Only 200 mA Idle current, no RF at input I 2 5 mA REG Leakage Current 0.1 0.9 A Over VCC, Frequency, and Temperature TM TM TM TM RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity , PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2009, RF Micro Devices, Inc. DS130424 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 11 Support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Qorvo
Qorvo, Inc.
RF9
RFMD
RFMD (Qorvo)
TriQuint
TriQuint (Qorvo)
TRIQUINT SEMI
TriQuint Semiconductor
TriQuint Semiconductor, Inc

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