Product Information

CGR0218ZTR13

CGR0218ZTR13 electronic component of Qorvo

Datasheet
RF Amplifier 5-210MHz NF 4.0dB OutLR 22dB

Manufacturer: Qorvo
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 13.4595
25 : USD 11.024
100 : USD 9.15
250 : USD 7.475
500 : USD 6.35
1000 : USD 5.1875
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Technology
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
OIP3 - Third Order Intercept
Minimum Operating Temperature
Maximum Operating Temperature
Operating Supply Current
Packaging
Test Frequency
Brand
Number Of Channels
Input Return Loss
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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CGR-0218Z Push-Pull 5MHz to 210MHz High Linearity InGaP HBT CGR-0218Z Amplifier PUSH-PULL 5MHz to 210MHz HIGH LINEARITY InGaP HBT AMPLIFIER Package: SOIC-8 Product Description Features RFMDs CGR-0218Z is a high performance InGaP HBT MMIC Amplifier designed 5V Single Supply with the InGaP process technology for excellent reliability. A Darlington configura- Excellent Linearity tion is utilized for broadband performance. The heterojunction increases break- down voltage and minimizes leakage current between junctions. The CGR-0218Z Two Amplifiers in Each SOIC-8 Package Simplify Push-Pull contains two amplifiers for use in wideband push-pull CATV amplifiers requiring PC Board Layout excellent second order performance. The second and third order non-linearities are greatly improved in the push-pull configuration. SOIC-8 Package Available in Lead-Free, RoHS Optimum Technology Compliant Packaging Matching Applied Amplifier Configuration GaAs HBT Applications GaAs MESFET CATV Head Ends InGaP HBT 1 8 SiGe BiCMOS CATV Line Drivers Si BiCMOS DOCSIS Cable Modems 2 7 SiGe HBT GaAs pHEMT Si CMOS 3 6 Si BJT GaN HEMT 4 5 InP HBT RF MEMS LDMOS Specification Parameter Unit Condition Min. Typ. Max. Small Signal Gain 17.3 dB 5MHz to 210MHz Gain Flatness 0.2 dB 5MHz to 210MHz OIP 42 dBm 5MHz to 210MHz, Tone Spacing=1MHz, P per 3 OUT tone=+6dBm P1dB 23 dBm 5MHz to 210MHz Input Return Loss 22 dB 5MHz to 210MHz Output Return Loss 22 dB 5MHz to 210MHz Noise Figure, Balun Insertion Loss 4.0 dB 5MHz to 210MHz Included CSO 80 dBc 7 Ch, Flat Tilt, +50dBmV CTB 67 dBc 7 Ch, Flat Tilt, +50dBmV XMOD 66 dBc 7 Ch, Flat Tilt, +50dBmV Device Operating Voltage 5.0 V Device Operating Current 217 mA 5V V CC Thermal Resistance (Junction to 30 C/W Junction to case slug Lead) Test Conditions: V =5V, I =217mA Typ., T =25C, Z =Z =75 , Push Pull Application Circuit CC D L S L RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical DS091015 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. 1 of 8CGR-0218Z Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit Exceeding any one or a combination of the Absolute Maximum Rating conditions may Max Device Current (I ) 300 mA D cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- Max Device Voltage (V)6.0 V D mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. Max RF Input Power 18 dBm RoHS status based on EUDirective2002/95/EC (at time of this document revision). Max Junction Temp (T ) 150 C J The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any Operating Temp Range (T ) -40 to +85 C L infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of Max Storage Temp 150 C RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. Min Storage Temp -40 C Operation of this device beyond any one of these limits may cause permanent dam- age. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: I V <(T -T )/R , j-l and T =T D D J L TH L LEAD Input Return Loss Output Return Loss 30 35 30 25 25 20 20 dB 15 dB 15 10 10 5 5 0 0 0 50 100 150 200 250 0 50 100 150 200 250 Frequency Frequency Gain Reverse Isolation 20 25 16 20 12 15 dB dB 8 10 4 5 0 0 0 50 100 150 200 250 0 50 100 150 200 250 Frequency Frequency 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 8 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. DS091015

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Qorvo
Qorvo, Inc.
RF9
RFMD
RFMD (Qorvo)
TriQuint
TriQuint (Qorvo)
TRIQUINT SEMI
TriQuint Semiconductor
TriQuint Semiconductor, Inc

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